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Titolo:
High temperature piezoresistive beta-SiC-on-SOI pressure sensor with on chip SiC thermistor
Autore:
Ziermann, R; von Berg, J; Obermeier, E; Wischmeyer, F; Niemann, E; Moller, H; Eickhoff, M; Krotz, G;
Indirizzi:
Tech Univ Berlin, Microsensor & Actuator Technol Ctr, Sekr TIB 3 1, D-13355 Berlin, Germany Tech Univ Berlin Berlin Germany D-13355 TIB 3 1, D-13355 Berlin, Germany Daimler Benz AG, Res & Technol, D-60528 Frankfurt, Germany Daimler Benz AG Frankfurt Germany D-60528 ol, D-60528 Frankfurt, Germany Daimler Benz AG, Dept FT2M, D-81663 Munich, Germany Daimler Benz AG Munich Germany D-81663 ept FT2M, D-81663 Munich, Germany
Titolo Testata:
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
, volume: 61-2, anno: 1999,
pagine: 576 - 578
SICI:
0921-5107(19990730)61-2:<576:HTPBPS>2.0.ZU;2-9
Fonte:
ISI
Lingua:
ENG
Keywords:
beta-SiC; SOI; high temperature pressure sensor; thermistor;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
7
Recensione:
Indirizzi per estratti:
Indirizzo: Ziermann, R Tech Univ Berlin, Microsensor & Actuator Technol Ctr, Sekr TIB3 1, GustavMeyer Allee 25, D-13355 Berlin, Germany Tech Univ Berlin GustavMeyer Allee 25 Berlin Germany D-13355
Citazione:
R. Ziermann et al., "High temperature piezoresistive beta-SiC-on-SOI pressure sensor with on chip SiC thermistor", MAT SCI E B, 61-2, 1999, pp. 576-578

Abstract

This paper reports about a piezoresistive beta-SiC-on-silicon on insulator(SOI) pressure sensor with an on chip polycrystalline SiC thermistor for high operating temperatures. The beta-SiC film was characterized by TEM-analysis, X-ray diffraction and Hall measurements. The investigations show a good single crystal quality of the beta-SiC film and a reliable electrical isolation by the buried oxide layer from the substrate at temperatures up to 673 K. The fabricated pressure sensor chip was tested in the temperature range between room temperature and 573 K. The sensitivity at room temperatureis S = 2.0 mV V-1 bar(-1). The temperature coefficient of the sensitivity (TCS) between room temperature and 573 K is TCS = -0.16 %K. The temperaturecoefficient of the resistivity (TCR) of the polycrystalline SIC thermistoris TCR = -0.17 %K-1. (C) 1999 Elsevier Science S.A. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 03/12/20 alle ore 15:48:34