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Titolo:
Heteroepitaxial growth of 3C-SiC on SOI for sensor applications
Autore:
Krotz, G; Moller, H; Eickhoff, M; Zappe, S; Ziermann, R; Obermeier, E; Stoemenos, J;
Indirizzi:
Daimler Benz AG, Dept FT2M, D-81663 Munich, Germany Daimler Benz AG Munich Germany D-81663 ept FT2M, D-81663 Munich, Germany Tech Univ Berlin, Berlin, Germany Tech Univ Berlin Berlin GermanyTech Univ Berlin, Berlin, Germany Aristotelian Univ Salonika, GR-54006 Salonika, Greece Aristotelian Univ Salonika Salonika Greece GR-54006 006 Salonika, Greece
Titolo Testata:
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
, volume: 61-2, anno: 1999,
pagine: 516 - 521
SICI:
0921-5107(19990730)61-2:<516:HGO3OS>2.0.ZU;2-I
Fonte:
ISI
Lingua:
ENG
Soggetto:
CUBIC SIC FILMS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
14
Recensione:
Indirizzi per estratti:
Indirizzo: Moller, H Daimler Benz AG, Dept FT2M, Postfach 800465, D-81663 Munich, Germany Daimler Benz AG Postfach 800465 Munich Germany D-81663 Germany
Citazione:
G. Krotz et al., "Heteroepitaxial growth of 3C-SiC on SOI for sensor applications", MAT SCI E B, 61-2, 1999, pp. 516-521

Abstract

Typical industrial high temperature sensor applications are reviewed and ashort overview of the different high temperature sensor technologies is given. The pros and cons are weighted. Silicon carbide on insulator (SiCOIN) technology comes out to be the most attractive, provided the state of development can be brought up to the one of silicon and silicon on insulator (SOT). Due to the lack of commercially available SIC on SOI wafers, a new SiC on SOI technology has been developed. It is based on the precursor gas methylsilane. The low temperature growth process is described and in-situ n-type doping, which is necessary for sensor applications, has been carried out successfully over a wide range of concentrations without loosing the good crystal properties. Actually the full process is being transferred from a test reactor to a 4 inch machine. This should provide 3C-SiC on SOI wafers for commercial sensor applications. A demonstrator of combustion pressure sensor dedicated to pressure-based engine control is shown. Results of the pressure sensor fitted in a motor-test setup are summarized. (C) 1999 ElsevierScience S.A. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 04/12/20 alle ore 03:35:55