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Titolo:
X-ray investigations of MBE-grown heteroepitaxial SiC layers on 6H-SiC substrates
Autore:
Bauer, A; Krausslich, J; Kocher, B; Goetz, K; Fissel, A; Richter, W;
Indirizzi:
Univ Jena, Inst Opt & Quantumelect, D-07743 Jena, Germany Univ Jena JenaGermany D-07743 Opt & Quantumelect, D-07743 Jena, Germany Univ Jena, Inst Solid State Phys, D-07743 Jena, Germany Univ Jena Jena Germany D-07743 t Solid State Phys, D-07743 Jena, Germany
Titolo Testata:
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
, volume: 61-2, anno: 1999,
pagine: 179 - 182
SICI:
0921-5107(19990730)61-2:<179:XIOMHS>2.0.ZU;2-3
Fonte:
ISI
Lingua:
ENG
Keywords:
MBE-grown heteroepitaxial SiC layers; X-ray investigations; 6H-SiC substrates;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
2
Recensione:
Indirizzi per estratti:
Indirizzo: Bauer, A Univ Jena, Inst Opt & Quantumelect, Max Wien Pl 1, D-07743 Jena, Germany Univ Jena Max Wien Pl 1 Jena Germany D-07743 07743 Jena, Germany
Citazione:
A. Bauer et al., "X-ray investigations of MBE-grown heteroepitaxial SiC layers on 6H-SiC substrates", MAT SCI E B, 61-2, 1999, pp. 179-182

Abstract

3C-SiC thin films have been investigated by means of high resolution X-raydiffraction techniques (omega/2 Theta-scan, omega-scan) and X-ray topography. The SiC films were grown in a solid source molecular beam epitaxy (MBE)system on 6H-SiC substrate crystals. We investigate the lattice mismatch parallel and perpendicular to the [0001]-direction using the so-called reciprocal space mapping technique. When 3C-SiC films were grown on 6H-SiC substrates, double position boundaries (stacking sequence ACB instead of ABC) were frequently observed. For the visualization of this effect high resolution X-ray topographic measurements are investigated at 3C-SiC layers on 6H-SiC substrates, We find, that the domains of different stacking sequences areequally distributed in the 3C-SiC epilayer. This domains attain a size up to approximately 200 x 200 mu m(2). (C) 1999 Elsevier Science S.A. All rights reserved.

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Documento generato il 28/09/20 alle ore 15:13:36