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Titolo:
Epitaxial growth of SiC-heterostructures on alpha-SiC(0001) by solid-source MBE
Autore:
Fissel, A; Kaiser, U; Krausslich, J; Pfennighaus, K; Schroter, B; Schulz, J; Richter, W;
Indirizzi:
Univ Jena, Inst Festkorperphys, D-07743 Jena, Germany Univ Jena Jena Germany D-07743 nst Festkorperphys, D-07743 Jena, Germany Univ Jena, Inst Opt & Quantenelekt, D-07743 Jena, Germany Univ Jena JenaGermany D-07743 Opt & Quantenelekt, D-07743 Jena, Germany
Titolo Testata:
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
, volume: 61-2, anno: 1999,
pagine: 139 - 142
SICI:
0921-5107(19990730)61-2:<139:EGOSOA>2.0.ZU;2-W
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOLECULAR-BEAM EPITAXY; THIN-FILMS;
Keywords:
epitaxial growth; SiC-heterostructures; alpha-SiC(0001); solid-source molecular beam epitaxy;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
12
Recensione:
Indirizzi per estratti:
Indirizzo: Fissel, A Univ Jena, Inst Festkorperphys, Max Wien Pl 1, D-07743 Jena, Germany Univ Jena Max Wien Pl 1 Jena Germany D-07743 7743 Jena, Germany
Citazione:
A. Fissel et al., "Epitaxial growth of SiC-heterostructures on alpha-SiC(0001) by solid-source MBE", MAT SCI E B, 61-2, 1999, pp. 139-142

Abstract

Epitaxial growth of SiC on alpha-SiC(0001) has been performed by means of solid-source molecular beam epitaxy (MBE). Low temperature (T < 1200 degrees C) deposition on on-axis SiC substrates always results in the growth of 3C-SiC, which is significantly improved by an alternating supply of Si and C. On vicinal substrates, a step flow growth mode has been realized at T down to 1050 degrees C. In experiments performed at T > 1200 degrees C, with astep decrease of supersaturation, a step-flow growth mode and for the first time nucleation of both 4H- and 6H-SiC under C-rich conditions was obtained. Based on these results we have demonstrated the growth of a double-heterostructure by firstly growing a 3C-SiC film on 4H-SiC(0001) at low temperature and a subsequent growth of 4H-SiC at low supersaturation on a C-stabilized surface on top of this film. Moreover, we also propose a new model to explain quantitatively the occurrence of different growth features and polytypes under certain growth conditions. (C) 1999 Elsevier Science S.A. All rights reserved.

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Documento generato il 30/09/20 alle ore 09:32:31