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Titolo:
Structural and electrical properties of metal-ferroelectric-silicon heterostructure fabricated by a direct wafer bonding and layer transfer process
Autore:
Alexe, M; Senz, ST; Pignolet, A; Hesse, D; Gosele, U;
Indirizzi:
Max Planck Inst Microstruct Phys, D-06120 Halle, Germany Max Planck Inst Microstruct Phys Halle Germany D-06120 20 Halle, Germany
Titolo Testata:
FERROELECTRICS
fascicolo: 1-4, volume: 225, anno: 1999,
pagine: 881 - 888
SICI:
0015-0193(1999)225:1-4<881:SAEPOM>2.0.ZU;2-1
Fonte:
ISI
Lingua:
ENG
Soggetto:
THIN-FILMS; INTEGRATION; TRANSISTORS;
Keywords:
metal-ferroelectric-silicon structures; interface trap density; direct wafer bonding;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
15
Recensione:
Indirizzi per estratti:
Indirizzo: Alexe, M Max Planck Inst Microstruct Phys, D-06120 Halle, Germany Max Planck Inst Microstruct Phys Halle Germany D-06120 Germany
Citazione:
M. Alexe et al., "Structural and electrical properties of metal-ferroelectric-silicon heterostructure fabricated by a direct wafer bonding and layer transfer process", FERROELECTR, 225(1-4), 1999, pp. 881-888

Abstract

Structural and electrical investigations revealed that a direct wafer bonding and layer transfer process yields good quality ferroelectric/Si interfaces for SBT, PZT and BiT ferroelectric thin films. C-V characteristics and interface trap measurements show a large difference for Au-Ferroelectric-Sistructures depending on whether the interface is fabricated by bonding or by direct deposition. For reacted interfaces the trap densities are rangingfrom 2x 10(12) cm(-2) ev(-1) for SBT/Si and BiT/Si to 2x 10(13) cm(-2)eV(-1) for PZT/Si. For bonded interfaces, independent of the top ferroelectric layer, the trap density is about 4x 10(11) cm(-2)eV(-1).

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 05/12/20 alle ore 19:51:55