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Titolo:
Growth of SrTiO3 and BaTiO3 thin films by atomic layer deposition
Autore:
Vehkamaki, M; Hatanpaa, T; Hanninen, T; Ritala, M; Leskela, M;
Indirizzi:
Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland Univ Helsinki Helsinki Finland FIN-00014 em, FIN-00014 Helsinki, Finland
Titolo Testata:
ELECTROCHEMICAL AND SOLID STATE LETTERS
fascicolo: 10, volume: 2, anno: 1999,
pagine: 504 - 506
SICI:
1099-0062(199910)2:10<504:GOSABT>2.0.ZU;2-C
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; ELECTRICAL-PROPERTIES; LOW-TEMPERATURE; EPITAXY; MOCVD; CA; SR; BA;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
29
Recensione:
Indirizzi per estratti:
Indirizzo: Vehkamaki, M Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland Univ Helsinki Helsinki Finland FIN-00014 Helsinki, Finland
Citazione:
M. Vehkamaki et al., "Growth of SrTiO3 and BaTiO3 thin films by atomic layer deposition", EL SOLID ST, 2(10), 1999, pp. 504-506

Abstract

SrTiO3 and BaTiO3 thin films were deposited by atomic layer deposition making use of a novel class of strontium and barium precursors, i.e., their cyclopentadienyl compounds, together with titanium tetraisopropoxide and water. SrTiO3 films were grown at 325 degrees C from strontium bis(triisopropylcyclopentadienyl) and BaTiO3 at 275 degrees C from barium bis(pentamethylcyclopentadienyl). After annealing in air at 500 degrees C, permittivities of180 and 165 were measured for SrTiO3 and BaTiO3, respectively. The films showed excellent conformality and complete filling of test trench structures. (C) 1999 The Electrochemical Society. S1099-0062(99)05-021-X. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 24/10/20 alle ore 12:07:40