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Titolo:
INTERFACIAL REACTION AND STRENGTH OF SIC TA/SIC JOINT/
Autore:
FENG J; NAKA M; SCHUSTER JC;
Indirizzi:
HARBIN INST TECHNOL,NATL KEY LAB ADV WELDING PROD TECHNOL,92 DAZHIJIEHARBIN 150001 PEOPLES R CHINA OSAKA UNIV,JOING & WELDING RES INST IBARAKI OSAKA 567 JAPAN
Titolo Testata:
Nippon Kinzoku Gakkaishi
fascicolo: 5, volume: 61, anno: 1997,
pagine: 456 - 461
SICI:
0021-4876(1997)61:5<456:IRASOS>2.0.ZU;2-C
Fonte:
ISI
Lingua:
JPN
Keywords:
CERAMIC-METAL JOINING; INTERFACE STRUCTURE; BONDING STRENGTH; REACTION LAYER; SILICON CARBIDE; TANTALUM SILICIDE; TANTALUM CARBIDE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
8
Recensione:
Indirizzi per estratti:
Citazione:
J. Feng et al., "INTERFACIAL REACTION AND STRENGTH OF SIC TA/SIC JOINT/", Nippon Kinzoku Gakkaishi, 61(5), 1997, pp. 456-461

Abstract

SiC was bonded to SiC using Ta foils at temperatures from 1673 to 1773 K for 3.6 similar to 144 ks in vacuum. The reaction phase and microstructure formed at the an interfaces between SiC and Ta were investigated. At the initial stage, an hexagonal Ta2C phase is formed at the Taside of the reaction zone, and the hexagonal Ta5Si3Cx phase at the interface SiC/Ta2C. At a longer bonding time, Ta and Ta2C were consumed and the cubic TaC, hexagonal TaSi2 and Ta5Si3Cx phase were detected inthe reaction zone. The reaction layer grew with the joining time following the parabolic law, and the activation energy for the growth was 266 kJ/mol. At a constant bonding temperature of 1773 K, the strength of the SiC joint showed a maximum at the bonding time of 28.8 ks. The brittle single phase of TaSi2 decreases the strength of the SiC joint.

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Documento generato il 03/12/20 alle ore 05:58:11