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Titolo:
HBT optoelectronic mixer at microwave frequencies: Modeling and experimental characterization
Autore:
Lasri, J; Betser, Y; Sidorov, V; Cohen, S; Ritter, D; Orenstein, M; Eisenstein, G;
Indirizzi:
Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel Technion Israel Inst Technol Haifa Israel IL-32000 L-32000 Haifa, Israel
Titolo Testata:
JOURNAL OF LIGHTWAVE TECHNOLOGY
fascicolo: 8, volume: 17, anno: 1999,
pagine: 1423 - 1428
SICI:
0733-8724(199908)17:8<1423:HOMAMF>2.0.ZU;2-8
Fonte:
ISI
Lingua:
ENG
Soggetto:
HETEROJUNCTION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
7
Recensione:
Indirizzi per estratti:
Indirizzo: Lasri, J Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel Technion Israel Inst Technol Haifa Israel IL-32000 aifa, Israel
Citazione:
J. Lasri et al., "HBT optoelectronic mixer at microwave frequencies: Modeling and experimental characterization", J LIGHTW T, 17(8), 1999, pp. 1423-1428

Abstract

A heterojunction bipolar transistor (HBT) optoelectronic mixer was studiedexperimentally and theoretically. A detailed large signal pi-model and a small signal analysis are described. The frequency dependence of down and upconversion has been analyzed and measured. In terms of conversion gain, the advantage of the down conversion process is clearly demonstrated. The values of parameters employed in the mixing process are also discussed for both large and small signal regimes.

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Documento generato il 24/11/20 alle ore 11:19:34