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Titolo:
Metal-insulator transition in boron-ion implanted type IIa diamond
Autore:
Tshepe, T; Prins, JF; Hoch, MJR;
Indirizzi:
Univ Witwatersrand, Dept Phys, Johannesburg, South Africa Univ Witwatersrand Johannesburg South Africa Johannesburg, South Africa Univ Witwatersrand, Schonland Res Ctr Nucl Sci, Johannesburg, South AfricaUniv Witwatersrand Johannesburg South Africa Johannesburg, South Africa
Titolo Testata:
DIAMOND AND RELATED MATERIALS
fascicolo: 8-9, volume: 8, anno: 1999,
pagine: 1508 - 1510
SICI:
0925-9635(199908)8:8-9<1508:MTIBIT>2.0.ZU;2-8
Fonte:
ISI
Lingua:
ENG
Soggetto:
CRITICAL CONDUCTIVITY EXPONENT; TRANSMUTATION-DOPED GE-70-GA; NONZERO TEMPERATURES; UNIVERSALITY;
Keywords:
annealing; conductivity; ion implantation; metal-insulator transition;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
10
Recensione:
Indirizzi per estratti:
Indirizzo: Tshepe, T Univ Witwatersrand, Dept Phys, Private Bag 3, Johannesburg, South Africa Univ Witwatersrand Private Bag 3 Johannesburg South Africa ica
Citazione:
T. Tshepe et al., "Metal-insulator transition in boron-ion implanted type IIa diamond", DIAM RELAT, 8(8-9), 1999, pp. 1508-1510

Abstract

Electrical conductivity measurements for selected boron-ion dopant concentrations have been made on type IIa diamond specimens in the temperature range 1.5-30 K. Samples have been implanted using the CIRA (cold implantation-rapid annealing) process, in which small implantation increments were used followed by high-temperature annealing to achieve a significant reduction in the levels of implantation-induced radiation damage and to obtain maximumboron activation. Further post anneals at temperatures up to 1700 degrees C were carried out. Using this procedure, we have recorded, for the first time, metallic conductivity behaviour in implanted surface layers in single-crystal diamond specimens with boron concentrations measured by secondary-ion mass spectrometry to be of the order of n = 10(21) cm(-3). The occurrence of a metal-insulator transition in this system is discussed. (C) 1999 Published by Elsevier Science S.A. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 06/04/20 alle ore 07:58:58