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Titolo:
Single 3-V supply operation GaAs linear power MESFET amplifier for 5.8-GHzISM band applications
Autore:
Ikeda, YM; Nagaoka, M; Wakimoto, H; Seshita, T; Mihara, M; Yoshimura, M; Tanabe, Y; Oya, K; Kitaura, T; Uchitomi, N;
Indirizzi:
Toshiba Corp, Ctr Res & Dev, Kawasaki, Kanagawa 2108582, Japan Toshiba Corp Kawasaki Kanagawa Japan 2108582 aki, Kanagawa 2108582, Japan Toshiba Corp, Semicond Syst Engn Ctr, Yokohama, Kanagawa 2470006, Japan Toshiba Corp Yokohama Kanagawa Japan 2470006 ama, Kanagawa 2470006, Japan
Titolo Testata:
IEICE TRANSACTIONS ON ELECTRONICS
fascicolo: 7, volume: E82C, anno: 1999,
pagine: 1086 - 1091
SICI:
0916-8524(199907)E82C:7<1086:S3SOGL>2.0.ZU;2-E
Fonte:
ISI
Lingua:
ENG
Keywords:
gallium arsenide; linear power amplifier; single voltage supply; MESFET; ISM; ETC;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
9
Recensione:
Indirizzi per estratti:
Indirizzo: Ikeda, YM Toshiba Corp, Ctr Res & Dev, Kawasaki, Kanagawa 2108582, Japan Toshiba Corp Kawasaki Kanagawa Japan 2108582 awa 2108582, Japan
Citazione:
Y.M. Ikeda et al., "Single 3-V supply operation GaAs linear power MESFET amplifier for 5.8-GHzISM band applications", IEICE TR EL, E82C(7), 1999, pp. 1086-1091

Abstract

A GaAs linear power amplifier operating with a single 3-V supply has been developed for 5.8-GHz ISM band applications. Two kinds of refractory WNx/W self-aligned gate MESFETs, a P-pocket MESFET and an asymmetric MESFET with a buried p-layer (BP-MESFET) have been compared in terms of DC characteristics, small signal characteristics and power performances at 5.8 GHz. To obtain both high gain and high efficiency in the case of single 3-V supply operation at 5.8 GHz. we used a highly efficient and linear P-pocket MESFET for the output-stage pou-er FET and a high-gain asymmetric MESFET with a buried p-laver (BP-MESFET) for the driver-stage FET. The bias condition for l-mm output-stage P-pocket MESFET was set near class-AB, so as to obtain sufficient output power with high PAE. The two-stage power amplifier MMIC modulewhich can include all matching and biasing circuits, has been designed andfabricated. The amplifier exhibits a high power gain of 17.9 dB and a highpower-added efficiency of 25.7% with a sufficient output pou er of 18.7 dBm at the l-dB compression point. This self-aligned gate GaAs MESFET technology is promising for near-future 5.8-GHz applications, because of such goodpower performance and good mass-producibility.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 25/09/20 alle ore 15:18:37