Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Surface structure of GaN(0001) in the chemical vapor deposition environment
Autore:
Munkholm, A; Stephenson, GB; Eastman, JA; Thompson, C; Fini, P; Speck, JS; Auciello, O; Fuoss, PH; DenBaars, SP;
Indirizzi:
Argonne Natl Lab, Div Chem, Argonne, IL 60439 USA Argonne Natl Lab Argonne IL USA 60439 ab, Div Chem, Argonne, IL 60439 USA Argonne Natl Lab, Div Sci Mat, Argonne, IL 60439 USA Argonne Natl Lab Argonne IL USA 60439 Div Sci Mat, Argonne, IL 60439 USA No Illinois Univ, Dept Phys, De Kalb, IL 60115 USA No Illinois Univ De Kalb IL USA 60115 v, Dept Phys, De Kalb, IL 60115 USA Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA Univ CalifSanta Barbara Santa Barbara CA USA 93106 Barbara, CA 93106 USA AT&T Labs Res, Florham Park, NJ 07932 USA AT&T Labs Res Florham Park NJ USA 07932 s Res, Florham Park, NJ 07932 USA
Titolo Testata:
PHYSICAL REVIEW LETTERS
fascicolo: 4, volume: 83, anno: 1999,
pagine: 741 - 744
SICI:
0031-9007(19990726)83:4<741:SSOGIT>2.0.ZU;2-O
Fonte:
ISI
Lingua:
ENG
Soggetto:
RAY-SCATTERING ANALYSIS; X-RAY; 0001 SURFACES; PHASE EPITAXY; GAN; GROWTH; RECONSTRUCTIONS; STOICHIOMETRY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
27
Recensione:
Indirizzi per estratti:
Indirizzo: Munkholm, A Argonne Natl Lab, Div Chem, 9700 S Cass Ave, Argonne, IL 60439USA Argonne Natl Lab 9700 S Cass Ave Argonne IL USA 60439 0439 USA
Citazione:
A. Munkholm et al., "Surface structure of GaN(0001) in the chemical vapor deposition environment", PHYS REV L, 83(4), 1999, pp. 741-744

Abstract

We report the first observation of the atomic-scale structure of the GaN(0001) surface in the metalorganic chemical vapor deposition environment. Measurements were performed using in situ grazing-incidence x-ray scattering. We determined the surface equilibrium phase diagram as a function of temperature and ammonia partial pressure, which contains two phases with 1 X 1 and (root 3 X 2 root 3)R30 degrees symmetries. The (root 5 X 2 root 5)R30 degrees phase is found to have a novel "missing row" structure with 1/3 of thesurface Ga atoms absent.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 19/09/20 alle ore 15:01:19