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Titolo:
In-situ monitoring of In0.53Al0.13Ga0.34As/In0.52Al0.48As 1.55 mu m vertical cavity surface emitting laser structure grown by metal organic chemical vapor deposition
Autore:
Baek, JH; Lee, B; Han, WS; Cho, HK; Smith, JM; Choi, IH;
Indirizzi:
Elect & Telecommun Res Inst, Taejon 305600, South Korea Elect & TelecommunRes Inst Taejon South Korea 305600 05600, South Korea Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea Korea Univ Seoul South Korea 136701 ci & Engn, Seoul 136701, South Korea
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 5A, volume: 38, anno: 1999,
pagine: 2707 - 2709
SICI:
0021-4922(199905)38:5A<2707:IMOI1M>2.0.ZU;2-J
Fonte:
ISI
Lingua:
ENG
Soggetto:
BRAGG REFLECTOR; WAVELENGTH; 1.55-MU-M; EPILAYERS;
Keywords:
in-situ monitoring; vertical cavity surface emitting laser (VCSEL); distributed Bragg reflector (DBR); InAlGaAs/InAlAs; reflectivity;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
19
Recensione:
Indirizzi per estratti:
Indirizzo: Baek, JH Elect & Telecommun Res Inst, POB 106, Taejon 305600, South Korea Elect & Telecommun Res Inst POB 106 Taejon South Korea 305600 ea
Citazione:
J.H. Baek et al., "In-situ monitoring of In0.53Al0.13Ga0.34As/In0.52Al0.48As 1.55 mu m vertical cavity surface emitting laser structure grown by metal organic chemical vapor deposition", JPN J A P 1, 38(5A), 1999, pp. 2707-2709

Abstract

A 1.55 mu m vertical cavity surface emitting laser (VCSEL) structure was grown by low pressure metalorganic chemical vapor deposition method. In-situlaser refectometry with a wavelength near resonant position of VCSEL structure was employed to monitor the optical thickness over the whole growth time. The distributed Bragg reflectors (DBR's) were grown with alternate In0.53Al0.13Ga0.34As and In0.52Al0.48As quarter lambda wavelength layers. The growth time of each layer in the DBR was determined through real time feedback of growth monitoring in the growth of In0.52Al0.48As and In0.53Al0.13Ga0.34As buffer layers prior to beginning the subsequently grown DBR structure. The oscillatory reflection signals by the laser operating at 1.53 mu m gave information for the position of stop band in the reflectivity spectrum of the VCSEL structure. The reflectivity spectrum of VCSEL structure showed excellent square-shaped flat band wider than 50 nm where the reflectivity reached a plateau as expected by the in-situ monitoring data.

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Documento generato il 27/11/20 alle ore 15:52:05