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Titolo:
Indications for electron localization effects in the strongly 2D organic metal kappa-(BEDT-TTF)(2)I-3 as observed by Shubnikov-de Haas experiments
Autore:
Balthes, E; Schiller, M; Schweitzer, D; Heinen, I; Strunz, W; Steep, E; Jansen, AGM; Wyder, P;
Indirizzi:
FKF, MPI, Grenoble High Magnet Field Lab, F-38042 Grenoble 9, France FKF Grenoble France 9 High Magnet Field Lab, F-38042 Grenoble 9, France CNRS, F-38042 Grenoble, France CNRS Grenoble France F-38042CNRS, F-38042 Grenoble, France Univ Stuttgart, Inst Phys 3, D-70550 Stuttgart, Germany Univ Stuttgart Stuttgart Germany D-70550 s 3, D-70550 Stuttgart, Germany Univ Heidelberg, Inst Anorgan Chem, D-69120 Heidelberg, Germany Univ Heidelberg Heidelberg Germany D-69120 , D-69120 Heidelberg, Germany
Titolo Testata:
EUROPHYSICS LETTERS
fascicolo: 1, volume: 47, anno: 1999,
pagine: 70 - 76
SICI:
0295-5075(19990701)47:1<70:IFELEI>2.0.ZU;2-M
Fonte:
ISI
Lingua:
ENG
Soggetto:
MAGNETO-QUANTUM OSCILLATIONS; SUPERCONDUCTOR KAPPA-(BEDT-TTF)(2)I-3; SYSTEM KAPPA-(BEDT-TTF)(2)I-3; ANOMALOUS BEHAVIOR; FIELDS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
20
Recensione:
Indirizzi per estratti:
Indirizzo: Balthes, E FKF, MPI, Grenoble High Magnet Field Lab, BP 166, F-38042 Grenoble 9, France FKF BP 166 Grenoble France 9 P 166, F-38042 Grenoble 9, France
Citazione:
E. Balthes et al., "Indications for electron localization effects in the strongly 2D organic metal kappa-(BEDT-TTF)(2)I-3 as observed by Shubnikov-de Haas experiments", EUROPH LETT, 47(1), 1999, pp. 70-76

Abstract

In the strongly two-dimensional (2D) organic metal kappa-(BEDT-TTF)(2)I-3 anomalous damping effects of the magneto-quantum oscillations are reported for the special conditions Theta = 0 degrees (i.e., B perpendicular to to the conducting planes), B > 12 T and T < 1 K. A new observed oscillation frequency F-0 = 13.2 T is found to control these effects at low Landau level filling factors v of F-0. This is of special interest since the damping effects are attributed to a, localization of electrons which may occur in 2D systems especially at low v.

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Documento generato il 27/09/20 alle ore 22:25:55