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Titolo:
The influence of fluorine desorption from ECR-CVD SiOF film
Autore:
Usami, T; Gomi, H;
Indirizzi:
NEC Corp Ltd, ULSI Device Dev Lab, Tokyo, Japan NEC Corp Ltd Tokyo Japan EC Corp Ltd, ULSI Device Dev Lab, Tokyo, Japan
Titolo Testata:
NEC RESEARCH & DEVELOPMENT
fascicolo: 3, volume: 40, anno: 1999,
pagine: 340 - 344
SICI:
0547-051X(199907)40:3<340:TIOFDF>2.0.ZU;2-T
Fonte:
ISI
Lingua:
ENG
Keywords:
SiOF; ECR-CVD (Electron Cycrotron Resornance-Chemical Vapor Deposition); fluorine; Ti silicide; SiF4 gas; low dielectric constant;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
11
Recensione:
Indirizzi per estratti:
Indirizzo: Usami, T NEC Corp Ltd, ULSI Device Dev Lab, Tokyo, Japan NEC Corp Ltd Tokyo Japan td, ULSI Device Dev Lab, Tokyo, Japan
Citazione:
T. Usami e H. Gomi, "The influence of fluorine desorption from ECR-CVD SiOF film", NEC RES DEV, 40(3), 1999, pp. 340-344

Abstract

The influence of fluorine desorption from SiOF films which was deposited by biased ECR-CVD (Electron Cycrotron Resornance-Chemical Vapor Deposition) was studied. It was found that F atoms desorbed from the SiOF film react with Ti silicide resulting in generating SiF4 gas. The generated SiF4 gas caused peel-off of the films.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 04/04/20 alle ore 11:30:14