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Titolo:
Film formation of polyacenic semiconductive materials (PAS) by excimer laser ablation
Autore:
Nishio, S; Narisada, Y; Kuriki, S; Matsuzaki, A; Sato, H; Kinoshita, H; Anekawa, A; Ando, N; Hato, Y; Yata, S; Tanaka, K; Yamabe, T;
Indirizzi:
Mie Univ, Fac Engn, Dept Chem Mat, Tsu, Mie 514, Japan Mie Univ Tsu Mie Japan 514 , Fac Engn, Dept Chem Mat, Tsu, Mie 514, Japan Kanebo Ltd, Miyakojima Ku, Osaka 534, Japan Kanebo Ltd Osaka Japan 534Kanebo Ltd, Miyakojima Ku, Osaka 534, Japan Kyoto Univ, Grad Sch Engn, Dept Mol Engn, Kyoto 60601, Japan Kyoto Univ Kyoto Japan 60601 Sch Engn, Dept Mol Engn, Kyoto 60601, Japan
Titolo Testata:
SYNTHETIC METALS
fascicolo: 1-3, volume: 101, anno: 1999,
pagine: 80 - 81
SICI:
0379-6779(199905)101:1-3<80:FFOPSM>2.0.ZU;2-Y
Fonte:
ISI
Lingua:
ENG
Keywords:
graphite and related compounds; amorphous thin films; semiconducting films;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
5
Recensione:
Indirizzi per estratti:
Indirizzo: Nishio, S Mie Univ, Fac Engn, Dept Chem Mat, 1515 Kamihamacho, Tsu, Mie 514, Japan Mie Univ 1515 Kamihamacho Tsu Mie Japan 514 Tsu, Mie 514, Japan
Citazione:
S. Nishio et al., "Film formation of polyacenic semiconductive materials (PAS) by excimer laser ablation", SYNTH METAL, 101(1-3), 1999, pp. 80-81

Abstract

Polyacenic semiconductor (PAS) thin films (PAS-F) were prepared onto various substrates at several substrate temperatures (T-s) by excimer laser ablation (ELA) of a bulk phenol-form-aldehyde (PF) resin and/or bulk PAS materials prepared by pyrolysis of the PF resin at several pyrolytic temperatures(T-p). Every PAS-F prepared by ELA was homogeneous dark brown, consisting of fine particles. Remarkable increase of electric conductivities was achieved on increasing T-s during the film formation process for every PAS-F. Inparticular, the conductivity of the film from PAS with T-p Of 935 degrees C prepared on a substrate at T-s of 300 degrees C (PAS-F(935, 300)) reachedmore than 10(1)Scm(-1). Although iodine doping was not possible after filmformation process, effective iodine doping during formation process of PAS-F by ELA of PF resin was confirmed. New sharp peaks at 682 and 1906cm(-1) related to stretching modes of carbon-iodine and sp carbon-carbon bonds, respectively, are detected in the I-2-doped PAS-F.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 02/06/20 alle ore 22:23:41