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Titolo:
MBE growth of HgCdTe on silicon substrates for large-area infrared focal plane arrays: A review of recent progress
Autore:
de Lyon, TJ; Jensen, JE; Gorwitz, MD; Cockrum, CA; Johnson, SM; Venzor, GM;
Indirizzi:
HRL Labs, Malibu, CA 90265 USA HRL Labs Malibu CA USA 90265HRL Labs, Malibu, CA 90265 USA Raytheon Infrared Ctr Excellence, Goleta, CA 93117 USA Raytheon Infrared Ctr Excellence Goleta CA USA 93117 Goleta, CA 93117 USA
Titolo Testata:
JOURNAL OF ELECTRONIC MATERIALS
fascicolo: 6, volume: 28, anno: 1999,
pagine: 705 - 711
SICI:
0361-5235(199906)28:6<705:MGOHOS>2.0.ZU;2-J
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOLECULAR-BEAM EPITAXY; DISLOCATION REDUCTION; DETECTOR STRUCTURES; SI; HETEROEPITAXY; HG1-XCDXTE; GAAS; CDTE;
Keywords:
CdTe; CdTe Si; focal-plane arrays (FPAs); heteroepitaxy; HgCdTe; HgCdTe Si; infrared detectors; molecular beam epitaxy (MBE);
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
28
Recensione:
Indirizzi per estratti:
Indirizzo: de Lyon, TJ HRL Labs, 3011 Malibu Canyon Rd, Malibu, CA 90265 USA HRL Labs3011 Malibu Canyon Rd Malibu CA USA 90265 A 90265 USA
Citazione:
T.J. de Lyon et al., "MBE growth of HgCdTe on silicon substrates for large-area infrared focal plane arrays: A review of recent progress", J ELEC MAT, 28(6), 1999, pp. 705-711

Abstract

We review the rapid progress that has been made during the past three years in the heteroepitaxial growth of HgCdTe infrared detector device structures on Si substrates by molecular-beam epitaxy. The evolution of this technology has enabled the fabrication of high performance, large-area HgCdTe infrared focal-plane arrays on Si substrates. A key element of this heteroepitaxial approach has been development of high quality CdTe buffer layers deposited on Si(112) substrates. We review the solutions developed by several groups to address the difficulties associated with the CdTe/Si(112) heteroepitaxial system, including control of crystallographic orientation and minimization of defects such as twins and threading dislocations. The material quality of HgCdTe/Si and the performance of HgCdTe detector structures grownon CdTe/Si(112) composite substrates is reviewed. Finally, we discuss someof the challenges related to composition uniformity and defect generation encountered with scaling the MBE growth process for HgCdTe to large-area Sisubstrates.

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Documento generato il 09/07/20 alle ore 14:20:57