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Titolo:
Nano-scale properties of defects in compound semiconductor surfaces
Autore:
Ebert, P;
Indirizzi:
KFAGermany GmbH, Forschungszentrum, Inst Festkorperforsch, D-52425 Julich,KFA Julich GmbH Julich Germany D-52425 Festkorperforsch, D-52425 Julich,
Titolo Testata:
SURFACE SCIENCE REPORTS
fascicolo: 4-8, volume: 33, anno: 1999,
pagine: 125 - 303
SICI:
0167-5729(1999)33:4-8<125:NPODIC>2.0.ZU;2-J
Fonte:
ISI
Lingua:
ENG
Soggetto:
SCANNING-TUNNELING-MICROSCOPY; SI-DOPED GAAS; ENERGY-ELECTRON-DIFFRACTION; POSITRON-LIFETIME SPECTROSCOPY; SCHOTTKY-BARRIER FORMATION; III-V SEMICONDUCTORS; CONSISTENT PSEUDOPOTENTIAL CALCULATION; ANGLE-RESOLVED PHOTOEMISSION; CHEMICAL-VAPOR-DEPOSITION; RELAXED GAAS(110) SURFACE;
Tipo documento:
Review
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
346
Recensione:
Indirizzi per estratti:
Indirizzo: Ebert, P KFA-52425h GmbH, Forschungszentrum, Inst Festkorperforsch, Postfach 1913, D KFA Julich GmbH Postfach 1913 Julich Germany D-52425 ach 1913, D
Citazione:
P. Ebert, "Nano-scale properties of defects in compound semiconductor surfaces", SURF SCI R, 33(4-8), 1999, pp. 125-303

Abstract

The present work reviews atomic-scale properties of point defects and dopant atoms exposed on and in cleavage surfaces of III-V and II-VI semiconductors. In particular, we concentrate on the identification of the types of defects and dopant atoms, the determination of the localized defect states, the electrical charge, and lattice relaxation, as well as the measurement ofthe interactions between different defects and/or dopant atoms. The physical mechanisms governing the formation of defect complexes, the compensationof dopant atoms, the pinning of the Fermi level, and the stability of defects are discussed in the light of the available theoretical information andexperimental results obtained mostly by scanning tunneling microscopy. (C)1999 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 28/03/20 alle ore 23:33:35