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Titolo:
Optically pumped continuous-wave operation of InAlGaAs/InAlAs/InP based 1.55 mu m vertical-cavity surface-emitting laser with SiO2/TiO2 dielectric mirror
Autore:
Baek, JH; Han, WS; Cho, HK; Lee, B; Choi, IH;
Indirizzi:
Elect & Telecommun Res Inst, Basic Res Lab, Taejon 305600, South Korea Elect & Telecommun Res Inst Taejon South Korea 305600 05600, South Korea Korea Univ, Dept Mat Sci & Engn, Sungbuk Gu, Seoul 136701, South Korea Korea Univ Seoul South Korea 136701 ungbuk Gu, Seoul 136701, South Korea
Titolo Testata:
ELECTRONICS LETTERS
fascicolo: 10, volume: 35, anno: 1999,
pagine: 814 - 815
SICI:
0013-5194(19990513)35:10<814:OPCOOI>2.0.ZU;2-7
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
6
Recensione:
Indirizzi per estratti:
Indirizzo: Baek, JH ElectSouthlecommun Res Inst, Basic Res Lab, Yusong POB 106, Taejon 305600, Elect & Telecommun Res Inst Yusong POB 106 Taejon South Korea 305600
Citazione:
J.H. Baek et al., "Optically pumped continuous-wave operation of InAlGaAs/InAlAs/InP based 1.55 mu m vertical-cavity surface-emitting laser with SiO2/TiO2 dielectric mirror", ELECTR LETT, 35(10), 1999, pp. 814-815

Abstract

A vertical-cavity surface-emitting laser operating at 1.55 mu m has been demonstrated by CW photopumping up to 260K. The structure consists of an InAlGaAs/InAlAs bottom mirror grown on InP substrate, a 2 lambda thick active region which has a periodic gain structure with 27 InAlGaAs/InGaAs quantum wells, and an SiO2/TiO2 dielectric top mirror. The input threshold power density has a minimum value of 3.4kW/cm(2) at 220K.

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Documento generato il 26/11/20 alle ore 09:05:33