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Titolo:
Family of the metal-induced Si(111)3x1 reconstructions with a top Si atom density of 4/3 monolayer
Autore:
Saranin, AA; Zotov, AV; Lifshits, VG; Katayama, M; Oura, K;
Indirizzi:
Osaka Univ, Fac Engn, Dept Elect Engn, Suita, Osaka 565, Japan Osaka UnivSuita Osaka Japan 565 Dept Elect Engn, Suita, Osaka 565, Japan Inst Automat & Control Proc, Vladivostok 690041, Russia Inst Automat & Control Proc Vladivostok Russia 690041 tok 690041, Russia Far Eastern State Univ, Fac Phys & Engn, Vladivostok 690000, Russia Far Eastern State Univ Vladivostok Russia 690000 divostok 690000, Russia Vladivostok State Univ Econ & Serv, Fac Elect, Vladivostok 690600, Russia Vladivostok State Univ Econ & Serv Vladivostok Russia 690600 600, Russia
Titolo Testata:
SURFACE SCIENCE
fascicolo: 3, volume: 426, anno: 1999,
pagine: 298 - 307
SICI:
0039-6028(19990520)426:3<298:FOTMSR>2.0.ZU;2-I
Fonte:
ISI
Lingua:
ENG
Soggetto:
SCANNING-TUNNELING-MICROSCOPY; PHOTOELECTRON-SPECTROSCOPY; ELECTRONIC-STRUCTURE; MG/SI(111) SYSTEM; SURFACE-STRUCTURE; PHOTOEMISSION; ADSORPTION; INTERFACE; COVERAGE; MODEL;
Keywords:
alkali metals; alkaline-earth metals; atom-solid interactions; low-energy electron diffraction (LEED); scanning tunnelling microscopy (STM); silicon; silver; surface structure; morphology; roughness and topography;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
43
Recensione:
Indirizzi per estratti:
Indirizzo: Oura, K Osakaanniv, Fac Engn, Dept Elect Engn, 2-2 Yamadaoka, Suita, Osaka565, Jap Osaka Univ 2-2 Yamadaoka Suita Osaka Japan 565 ita, Osaka 565, Jap
Citazione:
A.A. Saranin et al., "Family of the metal-induced Si(111)3x1 reconstructions with a top Si atom density of 4/3 monolayer", SURF SCI, 426(3), 1999, pp. 298-307

Abstract

Using scanning tunneling microscopy (STM), the common features and peculiarities of the Si(111)3 x 1 reconstructions induced by Na, Ag, Ca, and Mg have been studied. From the quantitative consideration of the Si mass transport occurring at the 7 x 7 --> 3 x 1 transformation, the top Si atom densityhas been found, and it appears to be the same, 4/3 monolayer, for all surface structures under consideration. A thorough examination of the numerous high-resolution STM images of Si(111)3 x 1-Na surfaces reveals that all 3 x1 domains have a unique orientation with respect to the Si(lll) substrate. The recently proposed double-pi-bonded chain and honeycomb chain-channel models appear to be the only models that fit these experimental findings properly. (C) 1999 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 05/12/20 alle ore 01:41:30