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Titolo:
Improvement of electron emission characteristics of Si field emitter arrays by surface modification
Autore:
Ehara, K; Kanemaru, S; Matsukawa, T; Itoh, J;
Indirizzi:
Toyo Kohan Co Ltd, Yamaguchi 7448611, Japan Toyo Kohan Co Ltd Yamaguchi Japan 7448611 Ltd, Yamaguchi 7448611, Japan Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan Electrotech Lab Tsukuba Ibaraki Japan 3058568 uba, Ibaraki 3058568, Japan
Titolo Testata:
APPLIED SURFACE SCIENCE
fascicolo: 1-4, volume: 146, anno: 1999,
pagine: 172 - 176
SICI:
0169-4332(199905)146:1-4<172:IOEECO>2.0.ZU;2-M
Fonte:
ISI
Lingua:
ENG
Keywords:
field emitter array; field emission; photoresist; noise power spectra; emission stability; silicon emitter;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
4
Recensione:
Indirizzi per estratti:
Indirizzo: Ehara, K Toyo Kohan Co Ltd, 1296-1 Higashitoyoi, Yamaguchi 7448611, Japan Toyo Kohan Co Ltd 1296-1 Higashitoyoi Yamaguchi Japan 7448611 an
Citazione:
K. Ehara et al., "Improvement of electron emission characteristics of Si field emitter arrays by surface modification", APPL SURF S, 146(1-4), 1999, pp. 172-176

Abstract

Photoresist-coated Si field emitter array (FEA) was fabricated with a newly developed fabrication process and well demonstrated. The photoresist was spin-coated on Si EEA and baked at 800 degrees C in a vacuum to evaporate the solvent. After baking, the thickness of the photoresist reduced to 20 nmfrom the initial thickness of 110 nm. The SiOx, insulator and the Nb gate electrode win deposited in series by electron-beam evaporation. The FEA structure was made by back etching. The emission current from the photoresist-coated FEA increased from the gate voltage of 40 V and reached 0.5 mu A/tipat 65 V. Thr obtained emission current was more stable than conventional Si FEAs. (C) 1999 Elsevier Science B,V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 25/11/20 alle ore 09:45:05