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Titolo:
Diamond deposition on Ni3Ge single- and polycrystalline substrates
Autore:
Haubner, R; Lux, B; Gruber, U; Schuster, JC;
Indirizzi:
Univ Technol Vienna, Inst Chem Technol Inorgan Mat, A-1060 Vienna, AustriaUniv Technol Vienna Vienna Austria A-1060 an Mat, A-1060 Vienna, Austria Univ Vienna, Inst Phys Chem, A-1090 Vienna, Austria Univ Vienna Vienna Austria A-1090 Inst Phys Chem, A-1090 Vienna, Austria
Titolo Testata:
DIAMOND AND RELATED MATERIALS
fascicolo: 2-5, volume: 8, anno: 1999,
pagine: 246 - 250
SICI:
0925-9635(199903)8:2-5<246:DDONSA>2.0.ZU;2-C
Fonte:
ISI
Lingua:
ENG
Soggetto:
GROWTH; NUCLEATION; COATINGS; NICKEL;
Keywords:
diamond; heteroepitaxy; Ni3Ge crystals;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
20
Recensione:
Indirizzi per estratti:
Indirizzo: Haubner, R Univ1060hnol Vienna, Inst Chem Technol Inorgan Mat, Getreidemarkt 9-161, A- Univ Technol Vienna Getreidemarkt 9-161 Vienna Austria A-1060
Citazione:
R. Haubner et al., "Diamond deposition on Ni3Ge single- and polycrystalline substrates", DIAM RELAT, 8(2-5), 1999, pp. 246-250

Abstract

In order to find new materials for heteroepitaxial diamond growth Ni3Ge single- and polycrystalline wafers were produced and used as substrates for diamond deposition in a microwave plasma system. The cubic phase Ni,Ge substrate revealed to be an interesting and potential material for heteroepitaxial diamond chemical vapour deposition due to its: (1) lattice parameter matching within <1% the lattice parameter of diamond; and (2) coexistence with carbon up to its (congruent) melting point. Thus centimetre-size crystal boules were pulled from the melt using the Czochralski crystal growth method. These boules were sectioned into wafers and polished. Low-pressure diamond was grown on the Ni3Ge wafers under various deposition conditions. The orientation of isolated diamond single crystals grown on the Ni3Ge substrate surface show that heteroepitaxial nucleation occurred. Diamond nucleation was low, as seeding methods to enhance nucleation were not used. (C) 1999 Elsevier Science S.A. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 03/12/20 alle ore 11:50:11