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Titolo:
Growth and structure of epitaxial CeO2 by oxygen-plasma-assisted molecularbeam epitaxy
Autore:
Kim, YJ; Gao, Y; Herman, GS; Thevuthasan, S; Jiang, W; McCready, DE; Chambers, SA;
Indirizzi:
Pacific NW Natl Labs, Environm Mol Sco Lab, Richland, WA 99352 USA PacificNW Natl Labs Richland WA USA 99352 co Lab, Richland, WA 99352 USA
Titolo Testata:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
fascicolo: 3, volume: 17, anno: 1999,
pagine: 926 - 935
SICI:
0734-2101(199905/06)17:3<926:GASOEC>2.0.ZU;2-Z
Fonte:
ISI
Lingua:
ENG
Soggetto:
RAY PHOTOELECTRON DIFFRACTION; ENERGY; CATALYSTS; SI(111); SILICON; DEPOSITION; SCATTERING; SURFACES; LAYERS; AUGER;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
25
Recensione:
Indirizzi per estratti:
Indirizzo: Chambers, SA Taejon Natl Univ Technol, Dept Chem Technol, Taejon, South Korea Taejon Natl Univ Technol Taejon South Korea n, South Korea
Citazione:
Y.J. Kim et al., "Growth and structure of epitaxial CeO2 by oxygen-plasma-assisted molecularbeam epitaxy", J VAC SCI A, 17(3), 1999, pp. 926-935

Abstract

The epitaxial growth of CeO2 films on SrTiO3(001) has been investigated over a wide range of growth parameters using oxygen-plasma-assisted molecularbeam epitaxy. The lattice mismatch for CeO2 on SrTiO3(001) is 2.0% (compressive) if the film nucleates with a 45 degrees rotation about [001] relative to the substrate (i.e., CeO2(001)\\SrTiO3(001) and CeO2[110]\\SrTiO3[100]). pure-phase, single-crystalline epitaxial films of CeO2(001) with the above epitaxial relationship readily grew on SrTiO3(001) for substrate temperatures ranging from 550 to 700 degrees C. However, small amounts of (111) and (220) minority orientations also nucleated at the higher substrate temperatures. In addition, the film surface was observed to become progressively smoother with increasing substrate temperature due to more extensive islandagglomeration. The highest-quality him surface grown at 700 degrees C is unreconstructed and oxygen terminated. (C) 1999 American Vacuum Society. [S0734-2101(99)02903-6].

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Documento generato il 23/01/20 alle ore 06:58:39