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Titolo:
MBE growth of HgCdTe avalanche photodiode structures for low-noise 1.55 mum photodetection
Autore:
de Lyon, TJ; Baumgratz, B; Chapman, G; Gordon, E; Hunter, AT; Jack, M; Jensen, JE; Johnson, W; Johs, B; Kosai, K; Larsen, W; Olson, GL; Sen, M; Walker, B; Wu, OK;
Indirizzi:
HRL Labs, Malibu, CA 90265 USA HRL Labs Malibu CA USA 90265HRL Labs, Malibu, CA 90265 USA Raytheon Infrared Ctr Excellence, Goleta, CA 93117 USA Raytheon Infrared Ctr Excellence Goleta CA USA 93117 Goleta, CA 93117 USA Univ Maryland, Lab Phys Sci, College Pk, MD 20742 USA Univ Maryland College Pk MD USA 20742 Phys Sci, College Pk, MD 20742 USA JA Woollam Co, Lincoln, NE 68508 USA JA Woollam Co Lincoln NE USA 68508JA Woollam Co, Lincoln, NE 68508 USA
Titolo Testata:
JOURNAL OF CRYSTAL GROWTH
, volume: 202, anno: 1999,
pagine: 980 - 984
SICI:
0022-0248(199905)202:<980:MGOHAP>2.0.ZU;2-C
Fonte:
ISI
Lingua:
ENG
Soggetto:
RESONANT IMPACT IONIZATION; HG1-XCDXTE; TEMPERATURE; GA1-XALXSB; FILMS;
Keywords:
molecular-beam epitaxy; HgCdTe; photodiode; spectroscopic ellipsometry;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
12
Recensione:
Indirizzi per estratti:
Indirizzo: de Lyon, TJ HRL Labs, 3011 Malibu Canyon Rd, Malibu, CA 90265 USA HRL Labs3011 Malibu Canyon Rd Malibu CA USA 90265 A 90265 USA
Citazione:
T.J. de Lyon et al., "MBE growth of HgCdTe avalanche photodiode structures for low-noise 1.55 mum photodetection", J CRYST GR, 202, 1999, pp. 980-984

Abstract

Molecular-beam epitaxy (MBE) has been utilized to fabricate HgCdTe heterostructure separate absorption and multiplication avalanche photodiodes (SAM-APD) sensitive to infrared radiation in the 1.1-1.6 mu m spectral al range,as an alternative technology to existing III-V APD detectors. Device structures were grown on CdZnTe(211)B substrates using CdTe, Te, and Hg sources with in situ In and As doping. The composition of the HgCdTe alloy layers was adjusted to achieve both efficient absorption of TR radiation in the 1.1-1.6 mu m spectral range and low excess-noise avalanche multiplication. TheHg1-xCdxTe alloy composition in the gain region of the device, x = 0.73, was selected to achieve equality between the bandgap energy and spin-orbit splitting to resonantly enhance the impact ionization of holes in the split-off valence band, The appropriate value of this alloy composition was determined from analysis of the 300 K bandgap and spin-orbit splitting energies of a set of calibration layers, using a combination of IR transmission and spectroscopic ellipsometry measurements. MBE-grown APD epitaxial wafers were processed into passivated mesa-type discrete device structures and diode mini-arrays using conventional HgCdTe process technology. Device spectral response. dark current density, and avalanche gain measurements were performed on the processed wafers. Avalanche: gains in the range of 30-40 at reverse bias of 85-90 V and array-median dark current density below 2 x 10(-4) A/cm(2) at 40 V reverse bias have been demonstrated. (C) 1999 Elsevier Science B.V. All rights reserved.

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Documento generato il 12/07/20 alle ore 06:35:55