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Titolo:
Defect energy levels in electron-irradiated and deuterium-implanted 6H silicon carbide
Autore:
Aboelfotoh, MO; Doyle, JP;
Indirizzi:
N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA N Carolina State Univ Raleigh NC USA 27695 & Engn, Raleigh, NC 27695 USA IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Heights, NY 10598 USA IBM Corp Yorktown Heights NY USA 10598 tr, Yorktown Heights, NY 10598 USA
Titolo Testata:
PHYSICAL REVIEW B-CONDENSED MATTER
fascicolo: 16, volume: 59, anno: 1999,
pagine: 10823 - 10829
SICI:
0163-1829(19990415)59:16<10823:DELIEA>2.0.ZU;2-T
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; RADIATION-INDUCED DEFECTS; NATIVE DEFECTS; TRANSIENT SPECTROSCOPY; SPIN-RESONANCE; PHOTOLUMINESCENCE; TRAPS; STATES; SINGLE; SI;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
40
Recensione:
Indirizzi per estratti:
Indirizzo: Aboelfotoh, MO N Carolina State Univ, Dept Mat Sci & Engn, Box 7907, Raleigh, NC 27695 USA N Carolina State Univ Box 7907 Raleigh NC USA 27695 695 USA
Citazione:
M.O. Aboelfotoh e J.P. Doyle, "Defect energy levels in electron-irradiated and deuterium-implanted 6H silicon carbide", PHYS REV B, 59(16), 1999, pp. 10823-10829

Abstract

Using deep-level transient spectroscopy, we studied defect energy levels and their annealing behavior in nitrogen-doped 6H-SiC epitaxial layers irradiated with 2-MeV electrons and implanted with 300-KeV deuterium or hydrogenat room temperature. Five levels located at E-c-0.34, E-c-0.41, E-c-0.51, E-c-0.62, and E-c-0.64 eV consistently appear in various samples grown by chemical vapor deposition, showing they are characteristic defects in n-type6H-SiC epitaxial layers. It is suggested that the E-c-0.51 eV level originates from a carbon vacancy, and that the two levels at E-c-0.34 and E-c-0.41eV, which likely arise from the occupation of inequivalent lattice sites, and the level at E-c-0.51 eV are different charge states of the carbon vacancy. The annealing kinetics of the E-c-0.51 eV level are first order with an activation energy of 1.45 eV, and a level at E-c-0.87 eV growing upon itsdecay arises most likely from a vacancy-impurity complex. The results for the E-c-0.62 eV and E-c-0.64 eV levels are consistent with a defect model involving a silicon vacancy on inequivalent sites in the 6H lattice. Furthermore, the present results show that at hydrogen doses of 10(11) cm(-2) no interaction between hydrogen and the irradiation-induced silicon vacancy takes place even after annealing at temperatures up to 800 degrees C, in contrast to the results reported for n-type silicon. [S0163-1829(99)13815-3].

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Documento generato il 28/09/20 alle ore 21:31:56