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Titolo:
Theory and experiment of In1-xGaxAsyP1-y and In1-x-yGaxAlyAs long-wavelength strained quantum-well lasers
Autore:
Minch, J; Park, SH; Keating, T; Chuang, SL;
Indirizzi:
Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA Univ IllinoisUrbana IL USA 61801 Elect & Comp Engn, Urbana, IL 61801 USA
Titolo Testata:
IEEE JOURNAL OF QUANTUM ELECTRONICS
fascicolo: 5, volume: 35, anno: 1999,
pagine: 771 - 782
SICI:
0018-9197(199905)35:5<771:TAEOIA>2.0.ZU;2-S
Fonte:
ISI
Lingua:
ENG
Soggetto:
SEMICONDUCTOR DIODE-LASERS; TEMPERATURE SENSITIVITY; RECOMBINATION RATES; GAIN SPECTRA; PERFORMANCE; INP; INGAASP; DEPENDENCE; AMPLIFIERS; LINEUP;
Keywords:
Auger recombination; gain; InGaAsP; InGaAlAs; semiconductor lasers; strained quantum-well lasers;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
33
Recensione:
Indirizzi per estratti:
Indirizzo: Minch, J UnivAIllinois, Dept Elect & Comp Engn, 1406 W Green St, Urbana, IL 61801 US Univ Illinois 1406 W Green St Urbana IL USA 61801 na, IL 61801 US
Citazione:
J. Minch et al., "Theory and experiment of In1-xGaxAsyP1-y and In1-x-yGaxAlyAs long-wavelength strained quantum-well lasers", IEEE J Q EL, 35(5), 1999, pp. 771-782

Abstract

We present a comprehensive model for the calculation of the bandedge profile of both the In1-xGaxAsyP1-y and In1-x-yGaxAlyAs quantum-well systems with an arbitrary composition. Using a many-body optical gain model, we compare the measured net modal gain for both material systems with calculations from the realistic band structure including valence band mixing effects. Calibrated measurements of the side light spontaneous emission spectrum based on its fundamental relation to the optical gain spectrum give values for the radiative current density, These measurements allow us to extract the relationship between total current density and carrier density, A fit of this relation yields values for the Auger coefficient for each material system.

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Documento generato il 02/07/20 alle ore 22:37:07