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Titolo:
Growth of Ga1-xInxAsySb1-y solid solutions from the five-component Ga-In-As-Sb-Pb melt by liquid phase epitaxy
Autore:
Kunitsyna, EV; Andreev, IA; Charykov, NA; Solovev, YV; Yakovlev, YP;
Indirizzi:
RAS, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia RAS St Petersburg Russia 194021 otech Inst, St Petersburg 194021, Russia
Titolo Testata:
APPLIED SURFACE SCIENCE
fascicolo: 1-4, volume: 142, anno: 1999,
pagine: 371 - 374
SICI:
0169-4332(199904)142:1-4<371:GOGSSF>2.0.ZU;2-W
Fonte:
ISI
Lingua:
ENG
Soggetto:
EQUILIBRIA; SYSTEMS;
Keywords:
Ga1-xInxAsy Sb1-x; EFLCP thermodynamic model; Ga-In-As-Sb-Pb system; Gibbs energy;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
15
Recensione:
Indirizzi per estratti:
Indirizzo: Kunitsyna, EV RAS,,AF Ioffe Physicotech Inst, Politekhnickeskaya 26, St Petersburg 194021 RAS Politekhnickeskaya 26 St Petersburg Russia 194021 94021
Citazione:
E.V. Kunitsyna et al., "Growth of Ga1-xInxAsySb1-y solid solutions from the five-component Ga-In-As-Sb-Pb melt by liquid phase epitaxy", APPL SURF S, 142(1-4), 1999, pp. 371-374

Abstract

Gallium antimonide (GaSb) and its solid solutions are widely used in optoelectronic devices for the ecologically important spectral range 2-5 mu m. In this paper we discuss a novel approach of using neutral solvents (such asPh) in GaInAsSb growth process. We employed the excess thermodynamic functions and linear combinations of chemical potentials (EFLCP) thermodynamic model to calculate the melt-solid phase diagrams in the Ga-In-As-Sb-Pb system. (C) 1999 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 19/09/20 alle ore 14:44:45