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Titolo:
Zirconium titanate microwave dielectrics prepared via polymeric precursor route
Autore:
Bianco, A; Gusmano, G; Freer, R; Smith, P;
Indirizzi:
Univ Roma Tor Vergata, Dipartimento Sci & Tecnol Chim, I-00133 Rome, ItalyUniv Roma Tor Vergata Rome Italy I-00133 ecnol Chim, I-00133 Rome, Italy Univ Manchester, Ctr Mat Sci, Manchester M1 7HS, Lancs, England Univ Manchester Manchester Lancs England M1 7HS er M1 7HS, Lancs, England UMIST, Manchester M1 7HS, Lancs, England UMIST Manchester Lancs England M1 7HS , Manchester M1 7HS, Lancs, England Univ Birmingham, IRC Mat, Birmingham B15 2TT, W Midlands, England Univ Birmingham Birmingham W Midlands England B15 2TT W Midlands, England
Titolo Testata:
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
fascicolo: 6-7, volume: 19, anno: 1999,
pagine: 959 - 963
SICI:
0955-2219(1999)19:6-7<959:ZTMDPV>2.0.ZU;2-M
Fonte:
ISI
Lingua:
ENG
Soggetto:
CERAMICS; MICROSTRUCTURE; ZRTIO4; (ZR,SN)TIO4;
Keywords:
powders chemical preparation; microwave dielectric properties; TiO2 ZrO2;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
24
Recensione:
Indirizzi per estratti:
Indirizzo: Bianco, A Univ Roma Tor Vergata, Dipartimento Sci & Tecnol Chim, Via Ric Sci, I-00133 Univ Roma Tor Vergata Via Ric Sci Rome Italy I-00133 i, I-00133
Citazione:
A. Bianco et al., "Zirconium titanate microwave dielectrics prepared via polymeric precursor route", J EUR CERAM, 19(6-7), 1999, pp. 959-963

Abstract

Zirconium titanate based materials are widely used as dielectric resonators in telecommunications. The performance of the devices depends on compositional and microstructural features. The polymeric precursor route enables the preparation of fine zirconium titanate powders at low processing temperatures. ZrTiO4 powders containing different amount of Hf (0.5% and 40 ppm) were prepared and sintered without additives at 1600 degrees C. The resulting materials were single-phase and had densities 96-98% theoretical. The dielectric Q value at 5 GHz was 5640 and the relative permittivity 36. The presence of Hf does not significantly affect the microwave dielectric response. (C) 1999 Elsevier Science Limited. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 27/09/20 alle ore 20:22:27