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Titolo:
A high temperature pressure sensor prepared by selective deposition of cubic silicon carbide on SOI substrates
Autore:
Eickhoff, M; Moller, H; Kroetz, G; Berg, JV; Ziermann, R;
Indirizzi:
Daimler Benz AG, Res & Technol, Dept FT2 M, D-81660 Munich, Germany Daimler Benz AG Munich Germany D-81660 pt FT2 M, D-81660 Munich, Germany Tech Univ Berlin, Microsensor & Actuator Technol Ctr, Berlin, Germany TechUniv Berlin Berlin Germany & Actuator Technol Ctr, Berlin, Germany
Titolo Testata:
SENSORS AND ACTUATORS A-PHYSICAL
fascicolo: 1-3, volume: 74, anno: 1999,
pagine: 56 - 59
SICI:
0924-4247(19990420)74:1-3<56:AHTPSP>2.0.ZU;2-2
Fonte:
ISI
Lingua:
ENG
Keywords:
high temperature pressure sensor; SiC; selective deposition of SiC; SOI substrates;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
Citazioni:
9
Recensione:
Indirizzi per estratti:
Indirizzo: Eickhoff, M Daimlerrmany AG, Res & Technol, Dept FT2 M, PO 80 04 65, D-81660 Munich, Ge Daimler Benz AG PO 80 04 65 Munich Germany D-81660 Munich, Ge
Citazione:
M. Eickhoff et al., "A high temperature pressure sensor prepared by selective deposition of cubic silicon carbide on SOI substrates", SENS ACTU-A, 74(1-3), 1999, pp. 56-59

Abstract

A high temperature pressure sensor with 3C-SiC piezoresistors as sensing elements was prepared. For the first time the sensing elements were structured by selective deposition of 3C-SiC on a patterned Si/SiO, surface. To ensure dielectric isolation SOI substrates were used. The effectiveness of theselective deposition process is demonstrated by REM-photographs. Characterisation of the sensing elements shows the good crystal quality of the sensing elements as indicated by the gauge factor of -18 at room temperature which decreases to -10 at 200 degrees C. As a benefit of the deep dry etching process the related sensitivity is 3.5 mV/V bar at room temperature decreasing to 2.1 mV/V bar at 200 degrees C for a 100-mu m thick circular center boss diaphragm. (C) 1999 Elsevier Science S.A. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 03/12/20 alle ore 14:39:23