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Titolo:
Influence of light excitation on mesoscopic electrical non-uniformities inundoped n-type high-resistivity LEC GaAs
Autore:
Siegel, W; Reichel, C; Kuhnel, G;
Indirizzi:
TU Bergakad Freiberg, Inst Expt Phys, D-09596 Freiburg, Germany TU Bergakad Freiberg Freiburg Germany D-09596 D-09596 Freiburg, Germany
Titolo Testata:
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
fascicolo: 4, volume: 14, anno: 1999,
pagine: L15 - L17
SICI:
0268-1242(199904)14:4<L15:IOLEOM>2.0.ZU;2-L
Fonte:
ISI
Lingua:
ENG
Soggetto:
HALL-MOBILITY; BULK GAAS; NONUNIFORMITIES;
Tipo documento:
Letter
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
9
Recensione:
Indirizzi per estratti:
Indirizzo: Siegel, W TUrmanyakad Freiberg, Inst Expt Phys, Silbermannstr 1, D-09596 Freiburg, Ge TU Bergakad Freiberg Silbermannstr 1 Freiburg Germany D-09596 e
Citazione:
W. Siegel et al., "Influence of light excitation on mesoscopic electrical non-uniformities inundoped n-type high-resistivity LEC GaAs", SEMIC SCI T, 14(4), 1999, pp. L15-L17

Abstract

Point contact current measurements with high spatial resolution were performed on undoped high-resistivity (up to semi-insulating) LEC GaAs samples under IR light excitation. Mesoscopic electrical non-uniformities, existing in the samples and strongly related to the cellular structure of dislocations, show different reactions to the light excitation depending on the dark carrier concentration of the samples. Especially, in samples with a Hall mobility strongly reduced by such non-uniformities the amplitude of the fluctuations of the point contact current, respectively of the resistivity between cell walls and cell centres, is clearly reduced by light excitation. This homogenization is connected with an enhancement of the photo Hall mobility in these samples compared to the dark Hall mobility.

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Documento generato il 27/05/20 alle ore 14:08:42