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Titolo:
State of the art 6 '' SI GaAs wafers made of conventionally grown LEC-crystals
Autore:
Flade, T; Jurisch, M; Kleinwechter, A; Kohler, A; Kretzer, U; Prause, J; Reinhold, T; Weinert, B;
Indirizzi:
Freiberger Compound Mat GmbH, D-09599 Freiberg, Germany Freiberger Compound Mat GmbH Freiberg Germany D-09599 Freiberg, Germany
Titolo Testata:
JOURNAL OF CRYSTAL GROWTH
, volume: 199, anno: 1999,
parte:, 1
pagine: 336 - 342
SICI:
0022-0248(199903)199:<336:SOTA6'>2.0.ZU;2-Y
Fonte:
ISI
Lingua:
ENG
Soggetto:
SEMIINSULATING GAAS;
Keywords:
LEC; semi-insulating GaAs; carbon control; homogeneity;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
16
Recensione:
Indirizzi per estratti:
Indirizzo: Jurisch, M Freibergeranympound Mat GmbH, Junger Lowe Schacht 5, D-09599 Freiberg, Germ Freiberger Compound Mat GmbH Junger Lowe Schacht 5 Freiberg Germany D-09599
Citazione:
T. Flade et al., "State of the art 6 '' SI GaAs wafers made of conventionally grown LEC-crystals", J CRYST GR, 199, 1999, pp. 336-342

Abstract

6" SI GaAs single crystals are grown by the standard LEG-process in a new-generation multi-heater puller designed for charges up to 50 kg and crucibles up to 12", applying the carbon controlled growth technology. It is demonstrated that the increasing requirements of device manufacturers with regard to macroscopic and mesoscopic homogeneity of electrical properties, mechanical strength, flatness and cleanliness of the wafers can be fully met by LEC grown 6" crystals. (C) 1999 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 12/07/20 alle ore 02:28:38