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Titolo:
Investigation of two-dimensional growth of AlN(0 0 0 1) on Si(1 1 1) by plasma-assisted molecular beam epitaxy
Autore:
Schenk, HPD; Kipshidze, GD; Kaiser, U; Fissel, A; Krausslich, J; Schulze, J; Richter, W;
Indirizzi:
Univ Jena, Inst Festkorperphys, D-07743 Jena, Germany Univ Jena Jena Germany D-07743 nst Festkorperphys, D-07743 Jena, Germany Russian Acad Sci, Ioffe Physicotech Inst, St Petersburg 194021, Russia Russian Acad Sci St Petersburg Russia 194021 t Petersburg 194021, Russia Univ Jena, Inst Opt & Quantenelekt, D-07743 Jena, Germany Univ Jena JenaGermany D-07743 Opt & Quantenelekt, D-07743 Jena, Germany
Titolo Testata:
JOURNAL OF CRYSTAL GROWTH
fascicolo: 1-2, volume: 200, anno: 1999,
pagine: 45 - 54
SICI:
0022-0248(199904)200:1-2<45:IOTGOA>2.0.ZU;2-#
Fonte:
ISI
Lingua:
ENG
Soggetto:
ALUMINUM NITRIDE; GAN; SILICON; FILMS; ULTRAVIOLET; LAYER;
Keywords:
nitrides; AlN; MBE; TEM; RF-source; surface reconstruction;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
27
Recensione:
Indirizzi per estratti:
Indirizzo: Schenk, HPD CNRS, CRHEA, Rue Bernard Gregory,Sophia Antipolis, F-06560 Valbonne, France CNRS Rue Bernard Gregory,Sophia Antipolis Valbonne France F-06560
Citazione:
H.P.D. Schenk et al., "Investigation of two-dimensional growth of AlN(0 0 0 1) on Si(1 1 1) by plasma-assisted molecular beam epitaxy", J CRYST GR, 200(1-2), 1999, pp. 45-54

Abstract

The conditions for the growth of single-crystalline wurtzite aluminum nitride (AlN) films on Si(1 1 1) have been established by plasma-assisted molecular beam epitaxy. The yield of atomic nitrogen from the RF-source has beeninvestigated by optical and by mass-spectrometry. ALN films grown under RF-source conditions with the highest yield of atomic nitrogen, as determinedby mass-spectrometry, generally show narrowest AlN(0 0 0 2) rocking curve linewidths in X-ray diffraction. By supplying nitrogen and aluminum close to unity, AlN has been grown two-dimensionally with atomically smooth surfaces. Surface reconstructions have been investigated by reflection of high-energy electron diffraction as a function of the substrate temperature and the Al-overpressure. High-resolution transmission electron micrographs taken at the heterointerface show a coincidence between both materials with a ratio of 5 .d d(AlN((2) over bar 110)) to 4 . d(Si((1) over bar 10)). The misfit is accomodated within the very first monolayers on either side. (C) 1999Elsevier Science B.V. All rights reserved.

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Documento generato il 28/09/20 alle ore 15:22:22