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Titolo:
MONTE-CARLO SIMULATIONS OF MEYER-NELDEL EFFECT ON CARRIER TIME-OF-FLIGHT IN A-SI-H
Autore:
CHEN WC; HAMEL LA; YELON A;
Indirizzi:
UNIV MONTREAL,DEPT PHYS,GRP RECH PHYS & TECHNOL COUCHES MINCES GCM,CP6128,SUCCURSALE CTR VILLE MONTREAL PQ H3C 3J7 CANADA UNIV MONTREAL,DEPT PHYS,GRP RECH PHYS & TECHNOL COUCHES MINCES GCM MONTREAL PQ H3C 3J7 CANADA ECOLE POLYTECH,DEPT GENIE PHYS,GRP RECH PHYS & TECHNOL COUCHES MINCESGCM MONTREAL PQ H3C 3A7 CANADA
Titolo Testata:
Journal of non-crystalline solids
fascicolo: 2-3, volume: 220, anno: 1997,
pagine: 254 - 260
SICI:
0022-3093(1997)220:2-3<254:MSOMEO>2.0.ZU;2-C
Fonte:
ISI
Lingua:
ENG
Soggetto:
HYDROGENATED AMORPHOUS-SILICON; TAIL-STATE DISTRIBUTION; DISPERSIVE TRANSPORT; LOCALIZED STATES; CHARGE-TRANSPORT; RULE; SEMICONDUCTORS; PHOTOCURRENT; DIFFUSION; LAW;
Tipo documento:
Article
Natura:
Periodico
Citazioni:
29
Recensione:
Indirizzi per estratti:
Citazione:
W.C. Chen et al., "MONTE-CARLO SIMULATIONS OF MEYER-NELDEL EFFECT ON CARRIER TIME-OF-FLIGHT IN A-SI-H", Journal of non-crystalline solids, 220(2-3), 1997, pp. 254-260

Abstract

We present Monte Carlo simulations of multiple-trapping transport with Meyer-Neldel effect in a-Si:H assuming exponential band tails. The transit time, t(T), and the dispersion parameters, alpha(1) and alpha(2), before and after the transit time, are extracted from the simulatedcurrents. The simulations show that including the Meyer-Neldel effectimproves the agreement of alpha(1) and alpha(2) with experimental data, both at low and high temperatures and fits the time-of-flight driftmobility measurements. Best fits to the data yield T-0=263 K, T-MN=464 K, nu(00)=5X10(9) s(-1) and mu(0)=4 cm(2) V-1 s(-1) for electrons and T-0=409 K, T-MN=809 K, nu(00)=6.5X10(10) s(-1) and mu(0)=0.5 cm(2) V-1 s(-1) for holes. (C) 1997 Elsevier Science B.V.

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Documento generato il 27/11/20 alle ore 08:50:12