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Titolo:
SCALING LAWS OF THE RIPPLE MORPHOLOGY ON CU(110)
Autore:
RUSPONI S; COSTANTINI G; BORAGNO C; VALBUSA U;
Indirizzi:
UNIV GENOA,INFM,UNITA RIC GENOVA GENOA ITALY UNIV GENOA,DIPARTIMENTO FIS,CNR,CTR FIS SUPERFICI & BASSE TEMP GENOA ITALY
Titolo Testata:
Physical review letters
fascicolo: 19, volume: 81, anno: 1998,
pagine: 4184 - 4187
SICI:
0031-9007(1998)81:19<4184:SLOTRM>2.0.ZU;2-H
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOLECULAR-BEAM EPITAXY; SCANNING TUNNELING MICROSCOPE; ION-BOMBARDED SI; ROUGHENING INSTABILITY; GROWTH; SURFACES; EVOLUTION; HOMOEPITAXY; TOPOGRAPHY; GE(001);
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
35
Recensione:
Indirizzi per estratti:
Citazione:
S. Rusponi et al., "SCALING LAWS OF THE RIPPLE MORPHOLOGY ON CU(110)", Physical review letters, 81(19), 1998, pp. 4184-4187

Abstract

The evolution of the Cu(110) surface morphology during low temperature (180 K) ion sputtering was studied as a function of the incident ionbeam angle theta by means of scanning tunneling microscopy. The morphology was dominated by a ripple structure with the wave vector parallel or perpendicular to the direction of the incident beam. The time evolution of the interface shows that the ripple wavelength increases in time following a scaling law lambda proportional to t(z), with z = 0.26 +/- 0.02. These results are ascribed to the effect of a Schwoebel barrier on the interlayer diffusion of the recoiling atoms produced during ion sputtering.

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Documento generato il 03/12/20 alle ore 05:49:34