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Titolo:
THERMALLY OXIDIZED ALN THIN-FILMS FOR DEVICE INSULATORS
Autore:
CHOWDHURY EA; KOLODZEY J; OLOWOLAFE JO; QIU G; KATULKA G; HITS D; DASHIELL M; VANDERWEIDE D; SWANN CP; UNRUH KM;
Indirizzi:
UNIV DELAWARE,DEPT ELECT ENGN NEWARK DE 19716 UNIV DELAWARE,DEPT PHYS & ASTRON NEWARK DE 19716
Titolo Testata:
Applied physics letters
fascicolo: 20, volume: 70, anno: 1997,
pagine: 2732 - 2734
SICI:
0003-6951(1997)70:20<2732:TOATFD>2.0.ZU;2-O
Fonte:
ISI
Lingua:
ENG
Soggetto:
OXIDATION; COATINGS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
10
Recensione:
Indirizzi per estratti:
Citazione:
E.A. Chowdhury et al., "THERMALLY OXIDIZED ALN THIN-FILMS FOR DEVICE INSULATORS", Applied physics letters, 70(20), 1997, pp. 2732-2734

Abstract

The structural, optical, and electronic properties of an insulating material prepared by the thermal oxidation of AlN thin films on Si havebeen studied by a number of different experimental techniques. The thermal oxidation at 1100 degrees C of reactively sputtered AlN films onSi wafers was found to result in the formation of an oxide with a relative Al to O concentration near Al2O3 with small amounts of incorporated N. The structure of the AlO:N oxide could be varied between amorphous and polycrystalline, depending on the preparation conditions, and the oxide surface was found to be approximately three time smoother than the as-sputtered ALN films, Metal-oxide-silicon capacitors had an oxide charge density of about 10(11) cm(-2), capacitance-voltage characteristics similar to pure SiO2, and a dielectric constant of 12.4. Infrared measurements yielded a refractive index of 3.9. These results indicate that thermally oxidized AlN films show promise as insulating structures for many integrated circuit applications, particularly for the case of III-V and group III-nitride based semiconductors. (C) 1997 American Institute of Physics.

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Documento generato il 01/10/20 alle ore 07:42:43