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Titolo:
USE OF BALLISTIC-ELECTRON-EMISSION MICROSCOPY TO OBSERVE THE DIVERSITY OF FABRICATED NANOMETER FEATURES AT THE AU SI INTERFACE/
Autore:
QIU X; SHANG G; WANG C; BAI C;
Indirizzi:
CHINESE ACAD SCI,INST CHEM BEIJING 100080 PEOPLES R CHINA CHINESE ACAD SCI,INST CHEM BEIJING 100080 PEOPLES R CHINA
Titolo Testata:
Applied physics A: Materials science & processing
, volume: 66, anno: 1998,
parte:, 1 supplemento:, S
pagine: 91 - 94
SICI:
0947-8396(1998)66:<91:UOBMTO>2.0.ZU;2-2
Fonte:
ISI
Lingua:
ENG
Soggetto:
SPECTROSCOPY; SILICON;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
19
Recensione:
Indirizzi per estratti:
Citazione:
X. Qiu et al., "USE OF BALLISTIC-ELECTRON-EMISSION MICROSCOPY TO OBSERVE THE DIVERSITY OF FABRICATED NANOMETER FEATURES AT THE AU SI INTERFACE/", Applied physics A: Materials science & processing, 66, 1998, pp. 91-94

Abstract

This paper examines the feasibility of locally modifying the interface properties of the gold/silicon system using ballistic electron emission microscopy (BEEM). Distinctly different fabricated features have been observed in BEEM images of the Au/Si interface depending on the polarity of the applied voltage pulses. The discrepancy that exists in the modification behavior on specific samples may reveal that the previously proposed adatom terraces and atomic interdiffusion mechanisms are not sufficient to account for all of the observations here.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 24/11/20 alle ore 22:00:11