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Titolo:
GROWTH OF ZINC-SULFIDE THIN-FILMS ON (100)SI WITH THE SUCCESSIVE IONIC LAYER ADSORPTION AND REACTION METHOD STUDIED BY ATOMIC-FORCE MICROSCOPY
Autore:
VALKONEN MP; LINDROOS S; RESCH R; LESKELA M; FRIEDBACHER G; GRASSERBAUER M;
Indirizzi:
UNIV HELSINKI,DEPT CHEM,POB 55 FIN-00014 HELSINKI FINLAND UNIV SO CALIF,DEPT CHEM LOS ANGELES CA 90089 VIENNA UNIV TECHNOL,INST ANALYT CHEM A-1060 VIENNA AUSTRIA
Titolo Testata:
Applied surface science
fascicolo: 1-2, volume: 136, anno: 1998,
pagine: 131 - 136
SICI:
0169-4332(1998)136:1-2<131:GOZTO(>2.0.ZU;2-8
Fonte:
ISI
Lingua:
ENG
Soggetto:
ZNS; DEPOSITION; SURFACES; EPITAXY; CDS;
Keywords:
THIN FILM; ZNS; AFM; SILAR METHOD;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
24
Recensione:
Indirizzi per estratti:
Citazione:
M.P. Valkonen et al., "GROWTH OF ZINC-SULFIDE THIN-FILMS ON (100)SI WITH THE SUCCESSIVE IONIC LAYER ADSORPTION AND REACTION METHOD STUDIED BY ATOMIC-FORCE MICROSCOPY", Applied surface science, 136(1-2), 1998, pp. 131-136

Abstract

Zinc sulfide (ZnS) thin films were grown on (100)Si substrates from solution with the successive ionic layer adsorption and reaction (SILAR) method. Aqueous solutions of ZnCl2 and Na2S were used as precursors. The morphological development of the films with increasing number of SILAR cycles was monitored ex situ by atomic force microscopy (AFM) operated in tapping mode. Their roughness increased vs. the growth cycles. AFM studies on (100)Si substrates treated with Na2S solution revealed that the dissolution of the silicon substrates is a process competing with the thin film growth and has to be considered when interpreting the AFM images. (C) 1998 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 20/09/20 alle ore 10:43:39