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Titolo:
X-RAY-SCATTERING STUDIES OF METAL AND SEMICONDUCTOR SURFACES
Autore:
MOCHRIE SGJ;
Indirizzi:
MIT,DEPT PHYS CAMBRIDGE MA 02139
Titolo Testata:
Current opinion in solid state & materials science
fascicolo: 5, volume: 3, anno: 1998,
pagine: 460 - 463
SICI:
1359-0286(1998)3:5<460:XSOMAS>2.0.ZU;2-Y
Fonte:
ISI
Lingua:
ENG
Soggetto:
ORIENTATIONAL PHASE-DIAGRAM; STEPPED SI(113) SURFACES; FACETING KINETICS; ELECTRON-MICROSCOPY; SILICON SURFACES; REFLECTIVITY; DIFFRACTION; GROWTH; TRICRITICALITY; SEPARATION;
Tipo documento:
Review
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
48
Recensione:
Indirizzi per estratti:
Citazione:
S.G.J. Mochrie, "X-RAY-SCATTERING STUDIES OF METAL AND SEMICONDUCTOR SURFACES", Current opinion in solid state & materials science, 3(5), 1998, pp. 460-463

Abstract

X-ray scattering is increasingly being employed to study the evolution versus time of surface morphology and/or structure, either followinga rapid change in temperature, so as to drive a surface phase transformation, or during growth or etching.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 30/09/20 alle ore 09:15:36