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Titolo:
FABRICATION OF SINGLE-CRYSTAL LITHIUM-NIOBATE FILMS BY CRYSTAL ION SLICING
Autore:
LEVY M; OSGOOD RM; LIU R; CROSS LE; CARGILL GS; KUMAR A; BAKHRU H;
Indirizzi:
COLUMBIA UNIV,MICROELECT SCI LABS NEW YORK NY 10027 PENN STATE UNIV,MAT RES LAB UNIVERSITY PK PA 16802 LEHIGH UNIV,DEPT MAT SCI & ENGN BETHLEHEM PA 18015 SUNY ALBANY,DEPT PHYS ALBANY NY 12222
Titolo Testata:
Applied physics letters
fascicolo: 16, volume: 73, anno: 1998,
pagine: 2293 - 2295
SICI:
0003-6951(1998)73:16<2293:FOSLFB>2.0.ZU;2-D
Fonte:
ISI
Lingua:
ENG
Soggetto:
LINBO3 THIN-FILMS; BUFFER LAYER; DEPOSITION; GROWTH; GAAS; MGO;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
13
Recensione:
Indirizzi per estratti:
Citazione:
M. Levy et al., "FABRICATION OF SINGLE-CRYSTAL LITHIUM-NIOBATE FILMS BY CRYSTAL ION SLICING", Applied physics letters, 73(16), 1998, pp. 2293-2295

Abstract

We report on the implementation of crystal ion slicing in lithium niobate (LiNbO3). Deep-ion implantation is used to create a buried sacrificial layer in single-crystal c-cut poled wafers of LiNbO3, inducing alarge etch selectivity between the sacrificial layer and the rest of the sample. 9-mu m-thick films of excellent quality are separated fromthe bulk and bonded to silicon and gallium arsenide substrates. Thesesingle-crystal films have the same room-temperature dielectric and pyroelectric characteristics, and ferroelectric transition temperature as single-crystal bulk. A stronger high-temperature pyroelectric response is found in the films. (C) 1998 American Institute of Physics. [S0003-6951(98)04142-4].

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Documento generato il 26/09/20 alle ore 11:20:41