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Titolo:
Atomic layer epitaxy - a valuable tool for nanotechnology?
Autore:
Ritala, M; Leskela, M;
Indirizzi:
Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland Univ Helsinki Helsinki Finland FIN-00014 em, FIN-00014 Helsinki, Finland
Titolo Testata:
NANOTECHNOLOGY
fascicolo: 1, volume: 10, anno: 1999,
pagine: 19 - 24
SICI:
0957-4484(199903)10:1<19:ALE-AV>2.0.ZU;2-1
Fonte:
ISI
Lingua:
ENG
Soggetto:
BINARY REACTION SEQUENCE; THIN-FILMS; QUANTUM DOTS; CONTROLLED DEPOSITION; SURFACE-CHEMISTRY; POROUS SILICON; GROWTH; SIO2; SUPERLATTICE; FABRICATION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
43
Recensione:
Indirizzi per estratti:
Indirizzo: Ritala, M Univ Helsinki, Dept Chem, POB 55, FIN-00014 Helsinki, Finland Univ Helsinki POB 55 Helsinki Finland FIN-00014 lsinki, Finland
Citazione:
M. Ritala e M. Leskela, "Atomic layer epitaxy - a valuable tool for nanotechnology?", NANOTECHNOL, 10(1), 1999, pp. 19-24

Abstract

Atomic layer epitaxy (ALE) is a surface controlled, self-limiting method for depositing thin films from gaseous precursors. In this paper the basic principle of ALE and its potentials for nanotechnology are introduced. From the point of view of nanotechnology the most important benefits of ALE are excellent conformality and easily realized subnanometre level accuracy in controlling film thicknesses, which are discussed in more detail with selected examples from thin-film technology. Studies on ALE preparation of laterally confined structures are also reviewed. The paper concludes with an outlook discussing the capabilities and challenges of using ALE in nanotechnology in depositing materials with one or several dimensions confined to the nanometre level.

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Documento generato il 19/09/20 alle ore 21:45:02