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Titolo:
IDENTIFICATION OF THE BIGA HETEROANTISITE DEFECT IN GAAS-BI
Autore:
KUNZER M; JOST W; KAUFMANN U; HOBGOOD HM; THOMAS RN;
Indirizzi:
FRAUNHOFER INST APPL SOLID STATE PHYS,TULLASTR 72 W-7800 FREIBURG GERMANY WESTINGHOUSE SCI & TECHNOL CTR PITTSBURGH PA 00000
Titolo Testata:
Physical review. B, Condensed matter
fascicolo: 7, volume: 48, anno: 1993,
pagine: 4437 - 4441
SICI:
0163-1829(1993)48:7<4437:IOTBHD>2.0.ZU;2-Q
Fonte:
ISI
Lingua:
ENG
Soggetto:
MAGNETIC-CIRCULAR-DICHROISM; ELECTRON-PARAMAGNETIC RESONANCE; III-V COMPOUNDS; AS-GROWN GAAS; SBGA HETEROANTISITE; ANTISITE DEFECTS; EL2; SEMICONDUCTORS; CRYSTALS; GAP;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
27
Recensione:
Indirizzi per estratti:
Citazione:
M. Kunzer et al., "IDENTIFICATION OF THE BIGA HETEROANTISITE DEFECT IN GAAS-BI", Physical review. B, Condensed matter, 48(7), 1993, pp. 4437-4441

Abstract

GaAs lightly doped with the heaviest group-V atom, bismuth (Bi), has been studied by conventional electron-spin resonance (ESR) and by ESR detected via the magnetic-circular-dichroism (MCD) absorption. A new Bi-related sharp-line MCD band has been observed on which two MCD-ESR lines have been discovered. They are shown to arise from the singly ionized Bi(Ga) double donor. Most remarkably, a substantial fraction, about 10%, of the total Bi content is found to occupy the Ga site. The Bi(Ga) MCD absorption band is tentatively assigned to an exciton deeply bound to the singly ionized double donor Bi(Ga)+.

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Documento generato il 04/07/20 alle ore 03:51:40