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Titolo:
ION-BOMBARDMENT OF AMORPHOUS-SILICON FILMS DURING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION IN AN RF DISCHARGE
Autore:
ABRAMOV AS; VINOGRADOV AY; KOSAREV AI; SHUTOV MV; SMIRNOV AS; ORLOV KE;
Indirizzi:
RUSSIAN ACAD SCI,AF IOFFE PHYS TECH INST ST PETERSBURG 194021 RUSSIA ST PETERSBURG STATE UNIV ST PETERSBURG 195251 RUSSIA
Titolo Testata:
Technical physics
fascicolo: 2, volume: 43, anno: 1998,
pagine: 180 - 187
SICI:
1063-7842(1998)43:2<180:IOAFDP>2.0.ZU;2-3
Fonte:
ISI
Lingua:
ENG
Soggetto:
TIME-AVERAGING PROCEDURE; A-SI-H; EXCITATION-FREQUENCY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
18
Recensione:
Indirizzi per estratti:
Citazione:
A.S. Abramov et al., "ION-BOMBARDMENT OF AMORPHOUS-SILICON FILMS DURING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION IN AN RF DISCHARGE", Technical physics, 43(2), 1998, pp. 180-187

Abstract

The characteristics of ion and electron fluxes to the surface of a growing silicon film are investigated in various rf discharge regimes insilane at frequencies of 13.56 MHz and 58 MHz in plasma-enhanced chemical vapor-deposition (PECVD) apparatus. The energy spectra of the ions and electrons bombarding the growing film are measured. The electronic properties of films grown under various degrees of ion bombardment are studied. The correlation of these properties with the ion parameters in the rf discharge plasma during film growth is discussed. (C) 1998 American Institute of Physics. [S1063-7842(98)01002-2].

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Documento generato il 11/07/20 alle ore 06:29:23