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Titolo:
ROUGHNESS EVOLUTION OF SI(111) BY LOW-ENERGY ION-BOMBARDMENT
Autore:
CHAN ACT; WANG GC;
Indirizzi:
RENSSELAER POLYTECH INST,DEPT PHYS APPL PHYS & ASTRON TROY NY 12180 RENSSELAER POLYTECH INST,DEPT PHYS APPL PHYS & ASTRON TROY NY 12180
Titolo Testata:
Surface science
fascicolo: 1-2, volume: 414, anno: 1998,
pagine: 17 - 25
SICI:
0039-6028(1998)414:1-2<17:REOSBL>2.0.ZU;2-E
Fonte:
ISI
Lingua:
ENG
Soggetto:
SCANNING-TUNNELING-MICROSCOPY; REFLECTION ELECTRON-MICROSCOPY; MOLECULAR-BEAM EPITAXY; SURFACE-MORPHOLOGY; ROUGHENING INSTABILITY; VACANCY DIFFUSION; METAL-SURFACES; SIO2 SURFACES; GE(001); GAAS(110);
Keywords:
ION ETCHING; SCANNING TUNNELING MICROSCOPY; SILICON; SURFACE ROUGHENING; SURFACE STRUCTURE, MORPHOLOGY, ROUGHNESS AND; TOPOGRAPHY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
49
Recensione:
Indirizzi per estratti:
Citazione:
A.C.T. Chan e G.C. Wang, "ROUGHNESS EVOLUTION OF SI(111) BY LOW-ENERGY ION-BOMBARDMENT", Surface science, 414(1-2), 1998, pp. 17-25

Abstract

We have examined the roughness evolution of the Si(lll) surface at T=610 K by 500 eV Ar ion bombardment near normal incidence using scanning tunneling microscopy from submonolayer to multilayer etching of up to 120 bilayers. The observed roughening was inconsistent with diffusion bias roughening, which is the mechanism thought to be dominant in roughening of crystalline surfaces by deposition and etching. The roughness evolution was interpreted in the framework of dynamic scaling, applicable when the step-edge barrier for surface diffusion is low. The roughness and growth exponents measured were in agreement with the numerical simulation of the Kuramoto-Sivashinsky equation with noise in the early time for 2+1 dimensions, which corresponds to the initial stage of dynamic scaling of ion bombardment. (C) 1998 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 03/12/20 alle ore 04:25:09