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Titolo:
DEPENDENCE OF DIELECTRIC-CAP QUANTUM-WELL DISORDERING OF GAAS-ALGAAS QUANTUM-WELL STRUCTURE ON THE HYDROGEN CONTENT IN SINX CAPPING LAYER
Autore:
CHOI WJ; HAN SM; SHAH SI; CHOI SG; WOO DH; LEE S; KIM SH; LEE JI; KANG KN; CHO J;
Indirizzi:
UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN SANTA BARBARA CA 92106 KWANGWOON UNIV,DEPT PHYS,NOWON GU SEOUL 139701 SOUTH KOREA KOREA ADV INST SCI & TECHNOL,PHOTON RES CTR SEOUL 130650 SOUTH KOREA
Titolo Testata:
IEEE journal of selected topics in quantum electronics
fascicolo: 4, volume: 4, anno: 1998,
pagine: 624 - 628
SICI:
1077-260X(1998)4:4<624:DODQDO>2.0.ZU;2-T
Fonte:
ISI
Lingua:
ENG
Soggetto:
SILICON-NITRIDE; OUT-DIFFUSION; FILMS;
Keywords:
HYDROGEN CONTENT IN CAPPING LAYER; QUANTUM-WELL DISORDERING; SEMICONDUCTOR PROCESS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
19
Recensione:
Indirizzi per estratti:
Citazione:
W.J. Choi et al., "DEPENDENCE OF DIELECTRIC-CAP QUANTUM-WELL DISORDERING OF GAAS-ALGAAS QUANTUM-WELL STRUCTURE ON THE HYDROGEN CONTENT IN SINX CAPPING LAYER", IEEE journal of selected topics in quantum electronics, 4(4), 1998, pp. 624-628

Abstract

Dielectric-cap quantum-well disordering of GaAs-AlGaAs multiple-quantum-well (MQW) structure was carried out using SiNx capping layer grownby plasma enhanced chemical raper deposition. There was a dependence of quantum-well disordering (QWD) on the hydrogen content in the SiNx capping layer, which was varied by changing the NH3 how rate during the film growth, The degree of QWD increased with increasing of hydrogencontent in the SiNx capping layer, The degree of QWD with SiNx capping laver grown at higher NH3 how rate was comparable to that with a 300-mn-thick SiO2 capping layer at the same rapid thermal annealing condition. This result implies the possibility of obtaining spatially selective disordered MQW structure using SiNx capping layers grown at different NH3 how rates. The effect of different SiNx cappings layers on QWD was characterized semiquantitatively by introducing relative vacancydensity.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 05/07/20 alle ore 22:20:01