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Titolo:
RIPPLE WAVE VECTOR ROTATION IN ANISOTROPIC CRYSTAL SPUTTERING
Autore:
RUSPONI S; COSTANTINI G; BORAGNO C; VALBUSA U;
Indirizzi:
UNIV GENOA,DIPARTIMENTO FIS,INFM,UNITA RIC GENOVA,VIA DODECANESO 33 GENOA ITALY UNIV GENOA,DIPARTIMENTO FIS,CNR,CTR FIS SUPERFICI & BASSE TEMP GENOA ITALY
Titolo Testata:
Physical review letters
fascicolo: 13, volume: 81, anno: 1998,
pagine: 2735 - 2738
SICI:
0031-9007(1998)81:13<2735:RWVRIA>2.0.ZU;2-O
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOLECULAR-BEAM EPITAXY; ION-BOMBARDED SI; ROUGHENING INSTABILITY; SURFACE-DIFFUSION; GROWTH; TOPOGRAPHY; RELAXATION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
26
Recensione:
Indirizzi per estratti:
Citazione:
S. Rusponi et al., "RIPPLE WAVE VECTOR ROTATION IN ANISOTROPIC CRYSTAL SPUTTERING", Physical review letters, 81(13), 1998, pp. 2735-2738

Abstract

Surface morphology of a Cu(110) crystal, generated by ion sputtering,has been investigated by scanning tunneling microscopy. Different from recent theoretical predictions and experimental results, normal sputtering produces a well defined ripple structure whose wave vector rotates from [001] to [1 (1) over bar 0] increasing the substrate temperature. Off-normal sputtering at low temperature (180 K) generates ripples whose orientation depends on both ion direction and surface azimuthal orientation. These results are described by a continuum equation which includes both surface curvature dependent erosion terms and diffusion terms accounting for surface anisotropy and Ehrlich-Schwoebel barriers. [S0031-9007(98)07159-2].

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Documento generato il 27/11/20 alle ore 02:07:51