Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
THE MECHANISM AT WORK IN 40 MHZ DISCHARGE SIH4 NH3/N-2 PLASMA CHEMICAL-VAPOR-DEPOSITION OF SINX FILMS AT VERY RATES/
Autore:
TAKECHI K; TAKAGI T; KANEKO S;
Indirizzi:
NEC CORP LTD,FUNCT DEVICES RES LABS,MINAMAE KU,4-1-1 MIYAZAKI KANAGAWA 216 JAPAN ANELVA CORP,DIV RES & DEV FUCHU TOKYO 183 JAPAN
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 4A, volume: 37, anno: 1998,
pagine: 1996 - 2001
SICI:
0021-4922(1998)37:4A<1996:TMAWI4>2.0.ZU;2-C
Fonte:
ISI
Lingua:
ENG
Soggetto:
HYDROGENATED AMORPHOUS-SILICON; EXCITATION-FREQUENCY; NITRIDE; TRANSISTORS;
Keywords:
VHF DISCHARGE; SILANE PLASMA CVD; SINX FILM; HIGH RATE DEPOSITION; OPTICAL EMISSION SPECTROSCOPY; A-SI-H TFT; FIELD EFFECT MOBILITY; TFT-LCD;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
18
Recensione:
Indirizzi per estratti:
Citazione:
K. Takechi et al., "THE MECHANISM AT WORK IN 40 MHZ DISCHARGE SIH4 NH3/N-2 PLASMA CHEMICAL-VAPOR-DEPOSITION OF SINX FILMS AT VERY RATES/", JPN J A P 1, 37(4A), 1998, pp. 1996-2001

Abstract

This paper reports a study on the mechanism involved in depositing SiNx films at very high rates buy using 40 MHz discharge SiH4/NH3/N-2 plasma enhanced chemical vapor deposition (PECVD). The quality of the films is comparable to that of films deposited at low rates at a conventional 13.56 Mhz frequency. From film deposition experiments, plasma diagnostic studies, and analytical calculation for both frequencies, we have found that the mechanism of depositing SiNx films at very high rates with a 40 Mhz discharge can be explained by the higher dissociation efficiency of both NH3 gas and SiH4 gas than at a conventional 13.56Mhz. We also report the performance of a thin film transistor (TFT), applicable to LCD switching devices, that was fabricated with SiNx film deposited at the high rate of 350 nm/min with a 40 MHZ frequency.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 02/07/20 alle ore 19:08:39