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Titolo:
TRANSPORT-PROPERTIES OF MICROCRYSTALLINE SILICON AT LOW-TEMPERATURES
Autore:
ZHOU JH; BARANOVSKII SD; YAMASAKI S; IKUTA K; KONDO M; MATSUDA A; TANAKA K;
Indirizzi:
JOINT RES CTR ATOM TECHNOL,1-1-4 HIGASHI TSUKUBA IBARAKI 305 JAPAN ANGSTROM TECHNOL PARTNERSHIP TSUKUBA IBARAKI JAPAN ELECTROTECH LAB TSUKUBA IBARAKI 305 JAPAN UNIV MARBURG,NATL INST ADV INTERDISCIPLINARY RES,NAIR,DEPT CHEM PHYS,CTR MAT SCI D-35032 MARBURG GERMANY
Titolo Testata:
Semiconductors (Woodbury, N.Y.)
fascicolo: 8, volume: 32, anno: 1998,
pagine: 807 - 811
SICI:
1063-7826(1998)32:8<807:TOMSAL>2.0.ZU;2-3
Fonte:
ISI
Lingua:
ENG
Soggetto:
HYDROGENATED AMORPHOUS-SILICON; INTERNAL PHOTOEMISSION; ELECTRONIC TRANSPORT; SOLAR-CELLS; SI-H; PHOTOCONDUCTIVITY; DISCONTINUITIES; RECOMBINATION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
25
Recensione:
Indirizzi per estratti:
Citazione:
J.H. Zhou et al., "TRANSPORT-PROPERTIES OF MICROCRYSTALLINE SILICON AT LOW-TEMPERATURES", Semiconductors (Woodbury, N.Y.), 32(8), 1998, pp. 807-811

Abstract

The dark conductivity and photoconductivity along with pulsed electron spin resonance have been measured over a wide temperature range witha high crystallinity hydrogenated microcrystalline silicon (mu c-Si:H) sample. The transport mechanism in mu c-Si : H is discussed on the basis of these measurements. Striking similarities in the temperature dependences of the dark conductivity and photoconductivity between mu c-Si:H and some well-studied materials, such as hydrogenated amorphous silicon, suggest that at low temperatures hopping of carriers between localized states dominates the transport properties of mu c-Si : H. (C) 1998 American Institute of Physics.

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Documento generato il 26/01/20 alle ore 01:31:59