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Titolo:
ELECTRODEPOSITION OF PBTE THIN-FILMS
Autore:
SALONIEMI H; KANNIAINEN T; RITALA M; LESKELA M;
Indirizzi:
UNIV HELSINKI,DEPT CHEM,POB 55 FIN-00014 HELSINKI FINLAND
Titolo Testata:
Thin solid films
fascicolo: 1-2, volume: 326, anno: 1998,
pagine: 78 - 82
SICI:
0040-6090(1998)326:1-2<78:EOPT>2.0.ZU;2-K
Fonte:
ISI
Lingua:
ENG
Soggetto:
REACTION SILAR TECHNIQUE; IONIC LAYER ADSORPTION; CATHODIC DEPOSITION; GROWTH; TELLURIDE; SELENIDE; EPITAXY; ALLOYS; CDTE; PBS;
Keywords:
ELECTRODEPOSITION; LEAD TELLURIDE (PBTE); THIN FILMS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
25
Recensione:
Indirizzi per estratti:
Citazione:
H. Saloniemi et al., "ELECTRODEPOSITION OF PBTE THIN-FILMS", Thin solid films, 326(1-2), 1998, pp. 78-82

Abstract

Lead telluride (PbTe) thin films were electrodeposited potentiostatically on SnO2 and Cu substrates from aqueous alkaline solutions of Pb(CH3COO)(2), disodium salt of ethylendiaminetetraacetic acid (EDTA) and TeO2. Film deposition reactions were studied with cyclic voltammetry. The films were characterized by scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX), X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), elastic recoil detection analysis (ERDA), deuteron induced reactions and profilometry. Potential ranges where PbTe films with constant composition were achieved were -0.70to -0.90 V versus SCE on SnO2 substrates and -0.80 to -0.95 V versus SCE on Cu substrates when the concentration of PbEDTA(2-) was 0.1 M. The corresponding potential ranges were -0.75 to -0.95 and -0.85 to -0.95 V versus SCE when the PbEDTA(2-) concentration was 0.05 M. The concentration of TeO32- was 0.001 M in both cases. The films were smooth, dense and crystalline having the cubic PbTe structure but they contained an excess of telluriurn. (C) 1998 Elsevier Science S.A. All rights reserved.

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Documento generato il 09/07/20 alle ore 23:14:07