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Titolo:
SIMULATION OF SOI DEVICES AND CIRCUITS USING BSIM3SOI
Autore:
SINITSKY D; TANG S; JANGITY A; ASSADERAGHI F; SHAHIDI G; HU CM;
Indirizzi:
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI BERKELEY CA 94720 IBM CORP FISHKILL NY 12533
Titolo Testata:
IEEE electron device letters
fascicolo: 9, volume: 19, anno: 1998,
pagine: 323 - 325
SICI:
0741-3106(1998)19:9<323:SOSDAC>2.0.ZU;2-A
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
7
Recensione:
Indirizzi per estratti:
Citazione:
D. Sinitsky et al., "SIMULATION OF SOI DEVICES AND CIRCUITS USING BSIM3SOI", IEEE electron device letters, 19(9), 1998, pp. 323-325

Abstract

A versatile SOI model derived from the BSIM3v3 hulk MOSFET mode! is capable of simulating partially and fully depleted devices with optionsfor self-heating and floating body effects, The model can automatically switch between fully and partially depleted regimes. After refiningbody current models we for the first time present successful de and transient device and circuit simulation of an SOI MOSFET technology with L-eff below 0.2 mu m.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 31/03/20 alle ore 05:06:31