Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
A PLASMA KINETICS MODEL - ANALYSIS OF WALL LOSS REACTIONS IN DRY-ETCHING OF SILICON DIOXIDE
Autore:
TAGO K; KAZUMI H; KOBAYASHI K;
Indirizzi:
HITACHI LTD,HITACHI RES LAB,7-1-1 OMIKA CHO HITACHI IBARAKI 31912 JAPAN
Titolo Testata:
Journal of alloys and compounds
fascicolo: 1, volume: 279, anno: 1998,
pagine: 60 - 65
SICI:
0925-8388(1998)279:1<60:APKM-A>2.0.ZU;2-6
Fonte:
ISI
Lingua:
ENG
Soggetto:
ENERGY;
Keywords:
PLASMA CHEMISTRY; COMPOSITION; SURFACE REACTION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
12
Recensione:
Indirizzi per estratti:
Citazione:
K. Tago et al., "A PLASMA KINETICS MODEL - ANALYSIS OF WALL LOSS REACTIONS IN DRY-ETCHING OF SILICON DIOXIDE", Journal of alloys and compounds, 279(1), 1998, pp. 60-65

Abstract

Computational models for gas-phase chemical reactions in plasmas and for sticking reactions on metallic Al walls have been developed and applied to the plasma chemistry of dry etching of silicon dioxide. Dissociation paths and threshold energies of gases are determined by using an ab initio density functional molecular orbital method, and dissociation cross sections are approximated. The electron energy distributionfunction is determined by using a particle-in-cell model with the Monte Carlo collision method, and dissociation reaction rates are determined. Plasma densities, electron temperatures. and radical densities are calculated by a kinetic model which consists of the fluid equations for plasmas and rate equations for radicals. The model effectiveness was confirmed by results comparison for the Ar discharge in an radio-frequency device. The chemical compositions of the dry etching plasmas have been investigated for C4F8. Calculated electron temperatures and densities agree with experimental results within factors of three. Correlations could be found between the composition of radicals in the plasma and the etch selectivities in C4F8. Adsorption potentials of fluorocarbon radicals on Al (III) surface clusters have been calculated by using molecular orbital method, and sticking coefficients are estimated. Sticking coefficient of fluorine atom is the largest and decrease in order of F, C, CF, H, CF2, and CF3. Effects of hypervalence bonding at Al surface are discussed. Phenomena [1] of no film depositions in CF4 RF plasma and film depositions in RF plasma of CF, mixed with Hz were explained by hypervalence reactions of Al. (C) 1998 Elsevier Science S.A. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 03/12/20 alle ore 12:49:32