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Titolo:
STATIC, DYNAMIC, AND NOISE-ANALYSIS OF MULTISECTION DFB LASERS USING FREQUENCY-DOMAIN TRANSMISSION-LINE MODEL
Autore:
CHEN CH; GRIFFEL G;
Indirizzi:
LUCENT TECHNOL,PHOTON CIRCUITS RES LAB HOLMDEL NJ 07733 POLYTECH UNIV,DEPT ELECT ENGN BROOKLYN NY 11201
Titolo Testata:
IEEE journal of quantum electronics
fascicolo: 9, volume: 34, anno: 1998,
pagine: 1533 - 1544
SICI:
0018-9197(1998)34:9<1533:SDANOM>2.0.ZU;2-Z
Fonte:
ISI
Lingua:
ENG
Soggetto:
DISTRIBUTED-FEEDBACK LASER; SPONTANEOUS EMISSION NOISE; SEMICONDUCTOR-LASERS; PHASE NOISE; OPTICAL AMPLIFIERS; CIRCUIT-THEORY; GAIN LEVER; LINEWIDTH; STABILITY; POWER;
Keywords:
DISTRIBUTED FEEDBACK LASERS; LASER NOISE; OPTICAL MODULATION; SIMULATION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
33
Recensione:
Indirizzi per estratti:
Citazione:
C.H. Chen e G. Griffel, "STATIC, DYNAMIC, AND NOISE-ANALYSIS OF MULTISECTION DFB LASERS USING FREQUENCY-DOMAIN TRANSMISSION-LINE MODEL", IEEE journal of quantum electronics, 34(9), 1998, pp. 1533-1544

Abstract

A novel frequency-domain transmission line model for multisection distributed feedback (DFB) lasers is developed. The characteristic impedances of active periodic structures are derived. A multisection DFB laser is described as a transmission line network, with each section represented by a transmission line segment with a corresponding characteristic impedance, Static, dynamic, and noise analysis of multisection DFB lasers is demonstrated. The reflections at the junctions between sections are evaluated more accurately. The resonant condition of the equivalent transmission line network, instead of cumbersome Wronskian, isused to reformulate the rate equations. The diffusion coefficient of Langevin noise terms of any two different positions is solved for the first time, resulting in a more accurate noise analysis of multisection semiconductor lasers, Analytical expressions of the dynamic responses and noise properties of multisection DFB semiconductor lasers are derived.

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Documento generato il 27/11/20 alle ore 22:31:17